Jiangsu Profile
Product List
6106. 50n06 Irf50n06 60V 50A to-220 IC Transistor Mosfet for Laptop 
[May 27, 2022]
[May 27, 2022] 50N06 IRF50N06 60V 50A TO-220 IC Transistor Mosfet for Laptop General Description The 50N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6107. Electronic Components 40V 7A Sop-8 P Mosfet with RoHS Certificate [Nov 14, 2023]
[Nov 14, 2023] Electronic Components 40V 7A SOP-8 P MOSFET with ROHS Certificate General Description The G07P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6108. Ao6294 Alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application [Nov 13, 2023]
[Nov 13, 2023] AO6294 alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6109. ISO9001 Certificate 40V 7A Sop-8 P Channel Mosfet with RoHS Certificate [Sep 28, 2022]
[Sep 28, 2022] ISO9001 Certificate 40V 7A Sop-8 P Channel Mosfet with RoHS Certificate General Description The G07P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6110. SGS Certificate Sgt Mosfet 60V 14A Mosfet for Pd [Jun 14, 2022]
[Jun 14, 2022] SGS Certificate Sgt Mosfet 60V 14A Mosfet for Pd General Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6111. Semiconductor Mosfet Transistor Fqd10n20L Equivalent Transistor of 200V 9A Dpak [Jun 14, 2022]
[Jun 14, 2022] Semiconductor Mosfet Transistor FQD10N20L Equivalent Transistor of 200V 9A DPAK General Description The 630A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6112. Power Device 60V 14A Sop-8 N Channel Mosfet [Jun 14, 2022]
[Jun 14, 2022] Power Device 60V 14A SOP-8 N Channel Mosfet General Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6113. RoHS Approved 40V 7A Sop-8 P Channel Mosfet [Jun 10, 2022]
[Jun 10, 2022] ROHS Approved 40V 7A Sop-8 P Channel Mosfet General Description The G07P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6114. New Original 60V 14A N Channel Power Mosfet with RoHS Certificate [Jun 10, 2022]
[Jun 10, 2022] New Original 60V 14A N Channel Power Mosfet with RoHS Certificate General Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6115. LED Power Supply Application 60n04 40V 60A To252 N Mosfet [Jun 10, 2022]
[Jun 10, 2022] LED Power Supply Application 60N04 40V 60A TO252 N MOSFET General Description The 60N04 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6116. Mosfet G20n06j 60V to-251 Package Mosfet with ISO9001 Certificate [Mar 18, 2022]
[Mar 18, 2022] MOSFET G20N06J 60V TO-251 Package MOSFET with ISO9001 Certificate General Description The G20N06J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6117. Electric Components G30n03A 30V 30A Dfn3*3-8L Mosfet Transistor for SMPS [Mar 18, 2022]
[Mar 18, 2022] Electric Components G30N03A 30V 30A DFN3*3-8L MOSFET Transistor for SMPS General Description The G30N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6118. Dmg3402L-7 Equivalent Transistor Mosfet G3404 of 30V 5.8A Sot-23 [Nov 14, 2023]
[Nov 14, 2023] DMG3402L-7 Equivalent Transistor MOSFET G3404 of 30V 5.8A SOT-23 General Description The G3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6119. Electronic Component N-CH 60V 3A Ao3422 Ao3460 Substitute Mosfet [Jun 10, 2022]
[Jun 10, 2022] Electronic Component N-CH 60V 3A Ao3422 Ao3460 Substitute Mosfet General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
6120. Discrete Component G16p03s P Channel 30V 16A Mosfet for Mobile Fast Charger [May 24, 2022]
[May 24, 2022] Discrete Component G16P03S P Channel 30V 16A Mosfet for Mobile Fast Charger General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
