Jiangsu Profile
Product List
8341. G30n04D3 40V 30A for Phone Power Supply IC Mosfet 
[Aug 19, 2022]
[Aug 19, 2022] Product Description G30N04D3 40V 30A phone power supply IC MOSFET Part Number G30N04D3 VDSS 40V ID 30A RDS 11.3mΩ @ vgs=4.5V Vth 1.32V Package DFN3*3 Ciss 1780 pF Crss 160 pF Datasheet ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8342. Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Mosfet for Mobile Fast Charger [Jun 10, 2022]
[Jun 10, 2022] AO4407 Substitute MOSFET G16P03S P-CH 30V 16A Transistor for Mobile Fast Charger General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8343. Ntc Thermistor Nsp Thermistor Negative Temperature Thermistor [Oct 18, 2023]
[Oct 18, 2023] Product Description It has small volume and big powder strongy control the wave of current,fast reaction,long life ,high reliablity .It is used in switch and control power, UPS power, protect all types of eletron ...
Company: Nanjing Guangliu Trading Co., Ltd.
8344. Mosfet G50n03K 30V 65A Dpak Field Effect Transistor [Aug 19, 2022]
[Aug 19, 2022] MOSFET G50N03K 30V 65A DPAK Field Effect Transistor General Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8345. Metal Glaze Resistor [Aug 07, 2014]
[Aug 07, 2014] Metal Glaze Resistors (high voltage) RMS / RMU series 1 Resistance value range is 10ohm----100Mohm 2 Stable and long service life 3 UL1676& c-UL( CSA C22.2 No. 1-98 ) ( file No. 220321 ) EN 60065: 1998 File No: ...
8346. G30n03A 30V 30A N Mosfet for Pd [Aug 19, 2022]
[Aug 19, 2022] Product Description G30N03A 30V 30A N Mosfet for Pd Part Number G30N03A VDSS 30V ID 30A RDS 9.2mΩ @ vgs=4.5V Vth 1.5V Package DFN3*3 Ciss 1490 pF Crss 135 pF Datasheet You may ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8347. Gt45n06 Goford Mosfet 60V 45A Dfn Package [Aug 19, 2022]
[Aug 19, 2022] Product Description Gt45n06 Goford Mosfet 60V 45A Dfn Package Part Number GT45N06 VDSS 60V ID 45A RDS 6.8mΩ @ vgs=10V Vth 1.7V Package DFN3*3 Ciss 1988 pF Crss 14 pF Datasheet You may ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8348. Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Transistor [Aug 19, 2022]
[Aug 19, 2022] AO4407 Substitute MOSFET G16P03S P-CH 30V 16A Transistor General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8349. Goford G15n10c 100V 15A to-252 Mosfet Transistor for Remote Control LED Dimmer [Aug 19, 2022]
[Aug 19, 2022] GOFORD G15N10C 100V 15A TO-252 MOSFET Transistor for Remote Control Led Dimmer General Description The G15N10C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8350. Goford G3401A Mosfet 30V 4.4A Sot-23 P Channel Mosfet for Mobile Charger [Aug 19, 2022]
[Aug 19, 2022] GOFORD G3401A MOSFET 30V 4.4A SOT-23 P Channel MOSFET for Mobile Charger General Description The G3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8351. Heat Energy Surge Wire Woundfusible Resistor [Aug 07, 2014]
[Aug 07, 2014] 1. The voltage type wire wound fusible resistor can provide reliable fusing behavior stable performance and endurance to surge voltage. 2. Please contact for more information.
8352. Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package [Aug 19, 2022]
[Aug 19, 2022] Electronic Component Mosfet Transistor 20P10 P-channel 100V 20A TO-220 Package General Description The 20P10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8353. N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application [Aug 19, 2022]
[Aug 19, 2022] N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8354. Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter [Aug 19, 2022]
[Aug 19, 2022] AO6294 Equivalent Mosfet Transistor GT52N10D5 100V 48A DFN5*6 Package for Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8355. Aluminum Flat-Bottom Grooved with Internal Rivets Natural Color Aluminum Case for Electrolytic ... [Feb 27, 2024]
[Feb 27, 2024] This product is suitable for CBB61/CBB65 new energy capacitor aluminum cases. The product has a diameter ranging from 20mm to 65mm, a height between 25mm and 350mm, and a wall thickness between 0.3mm and 0.65mm. ...
