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130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
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17701.

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b
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17702.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263
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17703.

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-20º C Cold-Resistant Uav Locator for Arctic Operations with 415mm Compact Design
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17704.

-20º C Cold-Resistant Uav Locator for Arctic Operations with 415mm Compact Design Open Details in New Window [Jun 24, 2025]

The portable UAV detection and positioning device The portable UAV detection and positioning device is a portable UAV detection device in the form of a suitcase and equipped with a UAV integrated management and control ...

Company: Sichuan Huafei Hangwei Information Technology Co., Ltd

Low-Power 100W Drone Monitor for Field OPS with 65º C Heat Tolerance
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17705.

Low-Power 100W Drone Monitor for Field OPS with 65º C Heat Tolerance Open Details in New Window [Jun 24, 2025]

The portable UAV detection and positioning device The portable UAV detection and positioning device is a portable UAV detection device in the form of a suitcase and equipped with a UAV integrated management and control ...

Company: Sichuan Huafei Hangwei Information Technology Co., Ltd

120A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n045r to-263
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17706.

120A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n045r to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263
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17707.

200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e
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17708.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85e to-263
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17709.

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 80V N-Channel Enhancement Mode Power Mosfet Dhe8004 to-263
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17710.

180A 80V N-Channel Enhancement Mode Power Mosfet Dhe8004 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH8004 /DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 98V N-Channel Enhancement Mode Power Mosfet Dhs046n10e to-263
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17711.

120A 98V N-Channel Enhancement Mode Power Mosfet Dhs046n10e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263
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17712.

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07b to-251b
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17713.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07b to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn
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17714.

240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 240 A BVGSS ±20 V EAS - - 1190 mJ Ptot - - 2 W Rdson - - 2.2 mΩ Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12e to-263
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17715.

160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd