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100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b
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18496.

100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c
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18497.

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c
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18498.

100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
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18499.

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c
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18500.

100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c
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18501.

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c
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18502.

150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/12mΩ /70A N-Mosfet DSG140n12n3 to-220c
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18503.

120V/12mΩ /70A N-Mosfet DSG140n12n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b
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18504.

68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220
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18505.

100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

New Us Socket DC 12V to AC 115V Inverter 1000W Converter Modified Sine Wave Power Inverter
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18506.

New Us Socket DC 12V to AC 115V Inverter 1000W Converter Modified Sine Wave Power Inverter Open Details in New Window [Nov 05, 2025]

Main Product Company Profile Morxin New Energy, established in 2005 and headquartered in Shenzhen, China, is aTaiwan-invested enterprise committed to R&D, innovation, and manufacturing. Witha professional team ...

Company: Changzhou Maoxin New Energy Co., Ltd.

High Quality 1000W DC 12V to AC 115V Emergency Power Modified Sine Wave Power Car Inverter
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18507.

High Quality 1000W DC 12V to AC 115V Emergency Power Modified Sine Wave Power Car Inverter Open Details in New Window [Nov 05, 2025]

Main Product Company Profile Morxin New Energy, established in 2005 and headquartered in Shenzhen, China, is aTaiwan-invested enterprise committed to R&D, innovation, and manufacturing. Witha professional team ...

Company: Changzhou Maoxin New Energy Co., Ltd.

off Grid Solar Inverter 600W with 12V/24VDC to 120/230/240VAC Modified Sine Wave Power Inverter
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18508.

off Grid Solar Inverter 600W with 12V/24VDC to 120/230/240VAC Modified Sine Wave Power Inverter Open Details in New Window [Nov 05, 2025]

Main Product Company Profile Morxin New Energy, established in 2005 and headquartered in Shenzhen, China, is aTaiwan-invested enterprise committed to R&D, innovation, and manufacturing. Witha professional team ...

Company: Changzhou Maoxin New Energy Co., Ltd.

300W 600W 1000W 2000W 3000W off Grid Single Phase Modified Sine Wave Inverter
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18509.

300W 600W 1000W 2000W 3000W off Grid Single Phase Modified Sine Wave Inverter Open Details in New Window [Nov 05, 2025]

Main Product Company Profile Morxin New Energy, established in 2005 and headquartered in Shenzhen, China, is aTaiwan-invested enterprise committed to R&D, innovation, and manufacturing. Witha professional team ...

Company: Changzhou Maoxin New Energy Co., Ltd.

1000W DC 12V to AC 115V Modified Sine Wave Power Inverter with USA Socket
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18510.

1000W DC 12V to AC 115V Modified Sine Wave Power Inverter with USA Socket Open Details in New Window [Nov 05, 2025]

Main Product Company Profile Morxin New Energy, established in 2005 and headquartered in Shenzhen, China, is aTaiwan-invested enterprise committed to R&D, innovation, and manufacturing. Witha professional team ...

Company: Changzhou Maoxin New Energy Co., Ltd.