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120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220
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18661.

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30A
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18662.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30A Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b
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18663.

100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c
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18664.

100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263
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18665.

210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c
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18666.

40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c
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18667.

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 100V N-Channel Enhancement Mode Power Mosfet Dh0159
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18668.

60A 100V N-Channel Enhancement Mode Power Mosfet Dh0159 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH0159/DHE015 9/DHB0159/DHD0159 DHF0159 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c
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18669.

100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

210A 60V N-Channel Enhancement Mode Power Mosfet Dh027n06 to-220c
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18670.

210A 60V N-Channel Enhancement Mode Power Mosfet Dh027n06 to-220c Open Details in New Window [Jun 23, 2025]

Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06D to-252
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18671.

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06D to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c
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18672.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c
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18673.

150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15D
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18674.

85A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15D Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c
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18675.

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd