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500MHz to 8000MHz Communication Module for Radar Applications
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36526.

500MHz to 8000MHz Communication Module for Radar Applications Open Details in New Window [Oct 10, 2025]

Communication Module 500MHz~8000MHz Low Noise Amplifier for radar system Product Description Quick Details Brand name: Shine Wave Technology Model Number: ...

Company: Nanjing Shinewave Technology Co., Ltd.

3000W 12V/24V/48V DC to AC 110V/120V/220V/230V off Grid Pure Sine Wave Solar Power Inverter
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36527.

3000W 12V/24V/48V DC to AC 110V/120V/220V/230V off Grid Pure Sine Wave Solar Power Inverter Open Details in New Window [Sep 29, 2025]

Main Product Company Profile Morxin New Energy, established in 2005 and headquartered in Shenzhen, China, is aTaiwan-invested enterprise committed to R&D, innovation, and manufacturing. Witha professional team ...

Company: Changzhou Maoxin New Energy Co., Ltd.

Customized Packaging Options for Conductor with Excellent Fatigue Resistance for Longevity AAC ...
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36528.

Customized Packaging Options for Conductor with Excellent Fatigue Resistance for Longevity AAC ... Open Details in New Window [Sep 28, 2025]

Product Description AAC-All Aluminium Conductor AAC (All Aluminum Conductor) is a high-quality overhead power transmission cable made from 99.7% pure electrolytic aluminum. Designed for long-distance power distribution, ...

Company: Yixing Shiny King Metal Materials Co., Ltd.

24V 2000W Pure Sine Wave Power Inverter with Charger
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36529.

24V 2000W Pure Sine Wave Power Inverter with Charger Open Details in New Window [Sep 28, 2025]

Main Product Company Profile Morxin New Energy, established in 2005 and headquartered in Shenzhen, China, is aTaiwan-invested enterprise committed to R&D, innovation, and manufacturing. Witha professional team ...

Company: Changzhou Maoxin New Energy Co., Ltd.

12V 1000W Pure Sine Wave off-Grid Quiet Mode Vehicle Charger Inverter
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36530.

12V 1000W Pure Sine Wave off-Grid Quiet Mode Vehicle Charger Inverter Open Details in New Window [Sep 27, 2025]

Main Product Company Profile Morxin New Energy, established in 2005 and headquartered in Shenzhen, China, is aTaiwan-invested enterprise committed to R&D, innovation, and manufacturing. Witha professional team ...

Company: Changzhou Maoxin New Energy Co., Ltd.

High Power 50W Ku Band RF Amplifier for 12-18GHz
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36531.

High Power 50W Ku Band RF Amplifier for 12-18GHz Open Details in New Window [Sep 15, 2025]

Ku Band 12-18GHz 47dBm Output Power 50W Solid State High RF Power Amplifier Product Description Description The module is designed for both commercial applications. The latest device technologies and design ...

Company: Nanjing Shinewave Technology Co., Ltd.

200MHz~15GHz Frequency Synthesizer Local Oscillators
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36532.

200MHz~15GHz Frequency Synthesizer Local Oscillators Open Details in New Window [Jul 31, 2025]

200MHz~15GHz Frequency synthesizer Local Oscillators Description Output frequency 200MHz~15GHz; Small size: 38*38*10mm Frequency step: 1Hz Control mode: SPI Product introduction The frequency output range ...

Company: Nanjing Shinewave Technology Co., Ltd.

1250MHz~10GHz Agile Frequency Synthesizer Local Oscillators
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36533.

1250MHz~10GHz Agile Frequency Synthesizer Local Oscillators Open Details in New Window [Jul 31, 2025]

1250MHz~10GHz Agile frequency synthesizer Local Oscillators Description Output frequency: 1250MHz~10GHz / 2500MHz~20GHz Frequency hopping time: 10us Small size: 65*65*13mm Control mode: ...

Company: Nanjing Shinewave Technology Co., Ltd.

50MHz~22.6GHz Low Phase Noise Frequency Synthesizer Local Oscillators
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36534.

50MHz~22.6GHz Low Phase Noise Frequency Synthesizer Local Oscillators Open Details in New Window [Jul 31, 2025]

50MHz~22.6GHz LOW PHASE NOISE FREQUENCY SYNTHESIZER Local Oscillators Description Output frequency: 50MHz~22.6GHz Small size: 50*50*13mm Phase noise: -107dBc/Hz@1kHz (10GHz) Control mode: SPI ...

Company: Nanjing Shinewave Technology Co., Ltd.

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07
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36535.

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V 50A N-Mosfet Dsd190n10L3
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36536.

100V 50A N-Mosfet Dsd190n10L3 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06
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36537.

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 Open Details in New Window [Jun 23, 2025]

Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c
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36538.

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
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36539.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263
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36540.

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd