Jiangsu Profile
Product List
12031. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85e to-263 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
12032. 9A 200V N-Channel Enhancement Mode Power Mosfet D630 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
12033. Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...
12034. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
12035. Dh065n06, to-220, 65A 60V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
12036. 160A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n035r to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
12037. 80A 100V N-Channel Enhancement Mode Power Mosfet Dhs084n10d to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS084N10/DHS084N10I/DHS084N10E/DHS084N10B/DHS084N10D DHS084N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
12038. 180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
12039. 18A 200V N-Channel Enhancement Mode Power Mosfet F640 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
12040. D70n04 to-252 70A 40V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...
12041. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100b to-251 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
12042. 110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85D to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS055N85/DHS055N85E DHS055N85D/DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
12043. Dh072n07D, to-252, 80A 68V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
12044. D120n04 to-252 120A 40V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 0.8 2 V EAS - - 960 mJ Ptot - - 120 W Rdson 3.3 - 4.5 mΩ ...
12045. Dh066n06b, to-251, 85A 60V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
