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68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c
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13771.

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH140N10 DH140N10B/ DH140N10D/ DH140N10E DH140N10 F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b
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13772.

320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c
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13773.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85D to-252b
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13774.

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b
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13775.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c
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13776.

70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 70N04A4/ E70N04A4/ B70N04A4/ D70N04A4 F70N04A4 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c
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13777.

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c
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13778.

120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c
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13779.

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b
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13780.

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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13781.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08d to-252b
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13782.

19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 19 A (T=100ºC) 13 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b
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13783.

25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30ad to-252b
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13784.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30ad to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c
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13785.

180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd