Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Converter

» Jiangsu Product List

Product List

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
Contact Now

4261.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263
Contact Now

4262.

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263
Contact Now

4263.

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251
Contact Now

4264.

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Kp2000A 2500V SCR Phase Control High Voltage High-Performance Panel Type Fast Switching Thyristor ...
Contact Now

4265.

Kp2000A 2500V SCR Phase Control High Voltage High-Performance Panel Type Fast Switching Thyristor ... Open Details in New Window [Apr 18, 2025]

Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6
Contact Now

4266.

100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
Contact Now

4267.

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10
Contact Now

4268.

Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 73 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b
Contact Now

4269.

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P35/ DH100P35I/ DH100P 35E/ DH100P35B/ DH100P35D DH100P 35F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b
Contact Now

4270.

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263
Contact Now

4271.

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

New Original Siemens 6sn1145-1bb00-0ea1 Simodrive 611 6sn11451bb00
Contact Now

4272.

New Original Siemens 6sn1145-1bb00-0ea1 Simodrive 611 6sn11451bb00 Open Details in New Window [Oct 25, 2025]

1.Product Name New Original SIEMENS 6SN1145-1BB00-0EA1 Simodrive 611 6SN11451BB00 2.Product Description 3.Product Photos 4.Our More Products 5.Application Industry 6.Hot Selling Brand 7.Our ...

Company: Kunshan Autofits Technology Co., Ltd.

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6
Contact Now

4273.

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6
Contact Now

4274.

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6
Contact Now

4275.

108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd