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40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247
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67216.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 800V N-Channel Enhancement Mode Power MOSFET B4N80 TO-251B
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67217.

4A 800V N-Channel Enhancement Mode Power MOSFET B4N80 TO-251B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 700V N-Channel Enhancement Mode Power MOSFET F8N70 TO-220F
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67218.

8A 700V N-Channel Enhancement Mode Power MOSFET F8N70 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 100V N-Channel Enhancement Mode Power MOSFET DHS051N10P DFN5X6
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67219.

108A 100V N-Channel Enhancement Mode Power MOSFET DHS051N10P DFN5X6 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6
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67220.

80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Schottky Barrier Diode MBR10100CT TO-220M
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67221.

10A 100V Schottky Barrier Diode MBR10100CT TO-220M Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15V Three-Terminal Positive Voltage Regulator IC 78M15A TO-252B
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67222.

15V Three-Terminal Positive Voltage Regulator IC 78M15A TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCGT20D65G4 TO-220
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67223.

20A 650V SiC Schottky Barrier Diode DCGT20D65G4 TO-220 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power MOSFET DH135N10P DFN5X6
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67224.

47A 100V N-Channel Enhancement Mode Power MOSFET DH135N10P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 650V Trench FS IGBT DGC80F65M TO-247
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67225.

80A 650V Trench FS IGBT DGC80F65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 600V Fast Recovery Diode MURF1660CT TO-220F
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67226.

16A 600V Fast Recovery Diode MURF1660CT TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 100V N-Channel Enhancement Mode Power MOSFET DH140N10D TO-252B
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67227.

68A 100V N-Channel Enhancement Mode Power MOSFET DH140N10D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH140N10D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 68 A (T=100ºC) 48 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 1200V Fast Recovery Diode MUR60120 TO-247
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67228.

60A 1200V Fast Recovery Diode MUR60120 TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power MOSFET DHS020N04E TO-263
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67229.

180A 40V N-Channel Enhancement Mode Power MOSFET DHS020N04E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6
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67230.

108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd