Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Device

» Jiangsu Product List

Product List

50A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LD TO-252B
Contact Now

85831.

50A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LD TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC20F65M2 TO-247
Contact Now

85832.

20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC20F65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 650V SiC Schottky Barrier Diode DCD04D65G4 TO-252
Contact Now

85833.

4A 650V SiC Schottky Barrier Diode DCD04D65G4 TO-252 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 100V N-Channel Enhancement Mode Power MOSFET DSG054N10N3 TO-220C
Contact Now

85834.

140A 100V N-Channel Enhancement Mode Power MOSFET DSG054N10N3 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 700V N-Channel Enhancement Mode Super Junction Power MOSFET DJF360N70T TO-220F
Contact Now

85835.

12A 700V N-Channel Enhancement Mode Super Junction Power MOSFET DJF360N70T TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 700V N-Channel Enhancement Mode Power MOSFET F7N70 TO-220F
Contact Now

85836.

7A 700V N-Channel Enhancement Mode Power MOSFET F7N70 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT F7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04D TO-252B
Contact Now

85837.

180A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 650V N-Channel Enhancement Mode Power MOSFET F12N65 TO-220F
Contact Now

85838.

12A 650V N-Channel Enhancement Mode Power MOSFET F12N65 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 500V N-Channel Enhancement Mode Power MOSFET F8N50 TO-220F
Contact Now

85839.

8A 500V N-Channel Enhancement Mode Power MOSFET F8N50 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT F8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 800V N-Channel Enhancement Mode Power MOSFET F5N80 TO-220F
Contact Now

85840.

5A 800V N-Channel Enhancement Mode Power MOSFET F5N80 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode MUR1060CT TO-220C
Contact Now

85841.

10A 600V Fast Recovery Diode MUR1060CT TO-220C Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Schottky Barrier Diode MBRF2060CT TO-220F
Contact Now

85842.

20A 60V Schottky Barrier Diode MBRF2060CT TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 48 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 10 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 30V N-Channel Enhancement Mode Power MOSFET DHD50N03 TO-252B
Contact Now

85843.

50A 30V N-Channel Enhancement Mode Power MOSFET DHD50N03 TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 650V N-Channel Super Junction Power MOSFET DHSJ25N65F TO-220F
Contact Now

85844.

25A 650V N-Channel Super Junction Power MOSFET DHSJ25N65F TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C
Contact Now

85845.

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd