Jiangsu Profile
Product List
86641. 240A 100V N-Channel Enhancement Mode Power MOSFET DHS025N10 TO-220C 
[Aug 09, 2026]
[Aug 09, 2026] Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...
86642. 18A 200V N-Channel Enhancement Mode Power MOSFET 640 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
86643. 15V Three-Terminal Negative Voltage Regulator IC L7915CV TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=-5V~-15V VI -35 V Output Current IO Internally Limited V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
86644. 25A 100V N-Channel Enhancement Mode Power MOSFET 25N10 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
86645. 10A 600V N-Channel Enhancement Mode Power MOSFET F10N60 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
86646. 7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
86647. 320A 30V N-Channel Enhancement Mode Power MOSFET DH012N03 TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...
86648. 30A 650V N-Channel SiC Power MOSFET DCC060M65G2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
86649. 40A 200V Fast Recovery Diode MUR4020DCT TO-3P [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
86650. 20A 900V N-Channel Enhancement Mode Power MOSFET 20N90D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
86651. 45A 300V Fast Recovery Diode MUR4540DCT TO-3P [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
86652. 180A 80V N-Channel Enhancement Mode Power MOSFET DH029N08 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH029N08/DHI029N08/DHE029N08 DH029N08D DH029N08B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
86653. 30A 150V Schottky Barrier Diode MBR30150CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...
86654. 2A 650V N-Channel Enhancement Mode Power MOSFET D2N65 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
86655. 88A 60V N-Channel Enhancement Mode Power MOSFET DHD070N06 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH070N06DHI070N06/DHE070N06/DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
