Jiangsu Profile
Product List
2596. S50p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer 
[Dec 10, 2020]
[Dec 10, 2020] Die Size 1.27mm×1.27mm IF 3A VR 60V IR 30μA VF 0.66V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2597. S50p40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.27mm×1.27mm IF 3A VR 40V IR 50μA VF 0.53V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2598. S45p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.14mm×1.14mm IF 2A VR 60V IR 2μA VF 0.72V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2599. S45p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.14mm×1.14mm IF 2A VR 40V IR 25μA VF 0.53V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2600. S45n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.14mm×1.14mm IF 2A VR 20V IR 100μA VF 0.46V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2601. S40p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.016mm×1.016mm IF 2A VR 40V IR 50μA VF 0.54V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2602. S40p60byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.016mm×1.016mm IF 2A VR 60V IR 25μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2603. S28n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1A VR 20V IR 100μA VF 0.45V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2604. S26n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.66mm×0.66mm IF 1A VR 40V IR 100μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2605. S24n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 0.75A VR 40V IR 1000μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2606. S28n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1A VR 60V IR 100μA VF 0.66V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2607. Bav199 5-Inch Fast Switching Diode Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.28mm×0.28mm IF 160mA VR 75V VF/VF1 0.9/1.25V IR 5μA CT 2pF trr 3000ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...
2608. Bj162 4-Inch Diode Wafer Bj162 Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1620μ m×1620μ m Known Good Dies 2800 P(W) 35 I(A) 3.2 BCEO/BCEO/BEBO(V) 220/350/7 hFE 10-40 fT(MHz) 5 Metallization Front: Al Back: Ag Yangzhou Genesis Microelectronics Co., ...
2610. Diode Laser Module [Dec 29, 2022]
[Dec 29, 2022] High output High optical-optical conversion Efficiency Reliable sealing Long life time over 10000 hours Compact Low prices
