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10D220K electronic components semiconductor Varistors

3166.

10D220K electronic components semiconductor Varistors Open Details in New Window [Aug 05, 2024]

Product Description FEATURES  Wide operating voltages ranging from 11VRMS to 680VRMS.  Fast response time of less than 25ns, instantly clamping the transient over voltage.  High surge current handling ...

Company: Kunshan Huateng Electronics Co., Ltd.

07D390K electronic components semiconductor Varistors

3167.

07D390K electronic components semiconductor Varistors Open Details in New Window [Aug 05, 2024]

Product Description FEATURES  Wide operating voltages ranging from 11 VRMS to 510 VRMS.  Fast response time of less than 25ns, instantly clamping the transient over voltage.  High surge current handling ...

Company: Kunshan Huateng Electronics Co., Ltd.

05D330K electronic components semiconductor Varistors

3168.

05D330K electronic components semiconductor Varistors Open Details in New Window [Aug 05, 2024]

Product Description FEATURES  Wide operating voltages ranging from 11VRMS to 460VRMS.  Fast response time of less than 25ns, instantly clamping the transient over voltage.  High surge current handling ...

Company: Kunshan Huateng Electronics Co., Ltd.

34S50 electronic components semiconductor Varistors

3169.

34S50 electronic components semiconductor Varistors Open Details in New Window [Aug 05, 2024]

Product Description FEATURES  Wide operating voltages ranging from 50VRMS to 750VRMS.  Fast response time of less than 25ns, instantly clamping the transient over voltage.  High surge current handling ...

Company: Kunshan Huateng Electronics Co., Ltd.

P-channel Enhancement Mode Power MOSFET JMTQ4407A PDFN3.3X3.3-8L

3170.

P-channel Enhancement Mode Power MOSFET JMTQ4407A PDFN3.3X3.3-8L Open Details in New Window [Jul 03, 2023]

Product Description Features VDS= -30V, ID= -35A RDS(ON) < 11m&Omega; @ VGS = -10V RDS(ON) < 18m&Omega; @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...

Company: Kunshan Huateng Electronics Co., Ltd.

P-channel Enhancement Mode Power MOSFET JMTQ200P03A PDFN3.3X3.3-8L

3171.

P-channel Enhancement Mode Power MOSFET JMTQ200P03A PDFN3.3X3.3-8L Open Details in New Window [Jul 03, 2023]

Product Description Features VDS= -30V, ID= -12A RDS(ON) <21m&Omega; @ VGS = -10V RDS(ON) <36m&Omega; @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...

Company: Kunshan Huateng Electronics Co., Ltd.

P-channel Enhancement Mode Power MOSFET JMTQ130P04A PDFN3.3X3.3-8L

3172.

P-channel Enhancement Mode Power MOSFET JMTQ130P04A PDFN3.3X3.3-8L Open Details in New Window [Jul 03, 2023]

Product Description Features VDS= -40V, ID= -30A RDS(ON) < 13m&Omega; @ VGS = -10V RDS(ON) < 19m&Omega; @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...

Company: Kunshan Huateng Electronics Co., Ltd.

P-channel Enhancement Mode Power MOSFET JMTQ100P03A PDFN3.3X3.3-8L

3173.

P-channel Enhancement Mode Power MOSFET JMTQ100P03A PDFN3.3X3.3-8L Open Details in New Window [Jul 03, 2023]

Product Description Features VDS = -30V, ID = -40A RDS(ON) < 10m&Omega; @ VGS = -10V RDS(ON) < 16m&Omega; @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...

Company: Kunshan Huateng Electronics Co., Ltd.

P-channel Enhancement Mode Power MOSFET JMTL3415KL SOT-23

3174.

P-channel Enhancement Mode Power MOSFET JMTL3415KL SOT-23 Open Details in New Window [Jul 03, 2023]

Product Description Features VDS = -20V, ID = -4.1A RDS(ON) <40m&Omega; @ VGS = -4.5V RDS(ON) <56m&Omega; @ VGS = -2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...

Company: Kunshan Huateng Electronics Co., Ltd.

electronic components P-channel MOSFET JMTK50P02A TO-252

3175.

electronic components P-channel MOSFET JMTK50P02A TO-252 Open Details in New Window [Jul 03, 2023]

Product Description Features VDS=-20V, ID=-60A RDS(ON) <8.5m&Omega; @ VGS = -4.5V RDS(ON) <12m&Omega; @ VGS = -2.5V High Power and Current Handing Capability Lead Free Product is Acquired Surface Mount ...

Company: Kunshan Huateng Electronics Co., Ltd.

Zp1500 400-1400V Zp Series Standard Diode SCR Thyristor

3176.

Zp1500 400-1400V Zp Series Standard Diode SCR Thyristor Open Details in New Window [Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

Zp1100 1400-2000V Zp Series Standard Diode SCR Thyristor

3177.

Zp1100 1400-2000V Zp Series Standard Diode SCR Thyristor Open Details in New Window [Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

Zp900 2000-2600V Zp Series Standard Diode SCR Thyristor

3178.

Zp900 2000-2600V Zp Series Standard Diode SCR Thyristor Open Details in New Window [Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

Zp800 2600-3400V Zp Series Standard Diode SCR Thyristor

3179.

Zp800 2600-3400V Zp Series Standard Diode SCR Thyristor Open Details in New Window [Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

Zp600 3600-4500V Zp Series Standard Diode SCR Thyristor

3180.

Zp600 3600-4500V Zp Series Standard Diode SCR Thyristor Open Details in New Window [Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.