Jiangsu Profile
Product List
3766. 07D330K electronic components semiconductor Varistors 
[Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES Wide operating voltages ranging from 11 VRMS to 510 VRMS. Fast response time of less than 25ns, instantly clamping the transient over voltage. High surge current handling ...
3767. 32D301K electronic components semiconductor Varistors [Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES Wide operating voltages ranging from 130VRMS to 1000 VRMS. Fast response time of less than 25ns, instantly clamping the transient over voltage. High surge current handling ...
3768. 32D221K electronic components semiconductor Varistors [Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES Wide operating voltages ranging from 130VRMS to 1000 VRMS. Fast response time of less than 25ns, instantly clamping the transient over voltage. High surge current handling ...
3769. 32D201K electronic component semiconductor Varistors [Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES Wide operating voltages ranging from 130VRMS to 1000 VRMS. Fast response time of less than 25ns, instantly clamping the transient over voltage. High surge current handling ...
3770. N-channel Enhancement Mode Power MOSFET JMTY11DN10A SOT-223 [Jul 03, 2023]
[Jul 03, 2023] Product Description Features 100V, 5A RDS(ON) <125mΩ @ VGS = 10V RDS(ON) <147mΩ @ VGS = 4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3771. N-channel Enhancement Mode Power MOSFET JMTQ35N06A PDFN3.3X3.3-8L [Jul 03, 2023]
[Jul 03, 2023] Product Description Features 60V,35A RDS(ON) <18mΩ @ VGS = 10V RDS(ON) <27mΩ @ VGS = 4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
3772. N-channel Enhancement Mode Power MOSFET JMTL3402A [Jul 03, 2023]
[Jul 03, 2023] Product Description Features 30V,4A RDS(ON)< 42mΩ @ VGS =10V RDS(ON)< 48mΩ @ VGS =4.5V RDS(ON)< 70mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead ...
3773. N-channel Enhancement Mode Power MOSFET JMTK50N06B TO-252-4R [Jul 03, 2023]
[Jul 03, 2023] Product Description Features 60V, 50A RDS(ON) <17mΩ @ VGS = 10V RDS(ON) <25mΩ @ VGS = 4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3774. P-channel Enhancement Mode Power MOSFET JMTK440P04A TO-252 [Jul 03, 2023]
[Jul 03, 2023] Product Description Features VDS= -40V, ID= -10A RDS(ON) < 44mΩ @ VGS = -10V RDS(ON) < 60mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3775. N-channel Enhancement Mode Power MOSFET JMTL3134KT7 SOT-723-3L [Jun 29, 2023]
[Jun 29, 2023] Product Description Features 20V, 0.75A RDS(ON)< 160mΩ @ VGS =4.5V RDS(ON)< 260mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ESD ...
3776. Dual P-channel Enhancement Mode Power MOSFET JMTP160P03D SOP-8 [Dec 12, 2022]
[Dec 12, 2022] Product Description Features VDS= -30V, ID= -11A RDS(ON) <16.5mΩ @ VGS = -10V RDS(ON) < 26.5mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3777. Dual P-channel Enhancement Mode Power MOSFET JMTP4953A SOP-8 [Dec 08, 2022]
[Dec 08, 2022] Product Description Features VDS= -30V, ID= -5.1A RDS(ON) < 55mΩ @ VGS = -10V RDS(ON) < 90mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3778. P-channel Enhancement Mode Power MOSFET JMTL850P04A SOT-23 [Nov 30, 2022]
[Nov 30, 2022] Product Description Features VDS= -40V, ID= -5A RDS(ON) < 90mΩ @ VGS = -10V RDS(ON) < 125mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3779. G6p06 P Channel 60V 4A Mosfet Irf7342 Substitute Transistor Mosfet [Sep 28, 2022]
[Sep 28, 2022] Product Description G6P06 p channel 60V 4A mosfet IRF7342 substitute transistor mosfet Part Number G6P06 VDSS -60V ID -4A RDS 80mΩ @ vgs=10V Vth -1.8V Package SOP-8 Ciss 976 pF Crss 30 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3780. G50n03K 30V 65A IGBT Module Transistor Mosfet (TO-252 package) [Aug 19, 2022]
[Aug 19, 2022] Product Description G50n03K 30V 65A IGBT module transistor mosfet (TO-252 package) Part Number G50N03K VDSS 30V ID 65A RDS 5.2 mΩ @ vgs=10V Vth 1.45V Package TO-252 Ciss 950 pF Crss 160 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
