Jiangsu Profile
Product List
5461. Mosfet G20n06j 60V to-251 Package Mosfet with ISO9001 Certificate 
[Mar 18, 2022]
[Mar 18, 2022] MOSFET G20N06J 60V TO-251 Package MOSFET with ISO9001 Certificate General Description The G20N06J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5462. Mosfet Manufacturer G30n03D3 30V 30A Dfn3X3 Mosfet for Pd [Mar 18, 2022]
[Mar 18, 2022] MOSFET Manufacturer G30N03D3 30V 30A DFN3X3 MOSFET for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5463. Electric Components G30n03A 30V 30A Dfn3*3-8L Mosfet Transistor for SMPS [Mar 18, 2022]
[Mar 18, 2022] Electric Components G30N03A 30V 30A DFN3*3-8L MOSFET Transistor for SMPS General Description The G30N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5464. Discrete Component Sira52dp Alternative 60V 53A Mosfet [Mar 18, 2022]
[Mar 18, 2022] Discrete Component SIRA52DP Alternative 60V 53A Mosfet General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5465. Dmg3402L-7 Equivalent Transistor Mosfet G3404 of 30V 5.8A Sot-23 [Nov 14, 2023]
[Nov 14, 2023] DMG3402L-7 Equivalent Transistor MOSFET G3404 of 30V 5.8A SOT-23 General Description The G3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5466. Fdmc4435bz Replacement Mosfet -30V P Channel Dfn Package for Mobile Fast Charge [Nov 13, 2023]
[Nov 13, 2023] FDMC4435BZ Replacement MOSFET -30V P Channel DFN Package for Mobile Fast Charge General Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5467. 200V 1.7A Mosfets for BMS [Sep 02, 2022]
[Sep 02, 2022] Product Description New Original Mosfet 200V 1.7A N Channel Sot-23-3L MOSFET for Aromatherapy Machine Part Number G01N20LE VDSS 200V ID 1.7A RDS 0.56Ω @ vgs=10V Vth 1.8V Package SOT-23-3L Ciss 580 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5468. Original Package Electronic Components Gt55n06 60V 53A Power Transistor Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description Original Package Electronic Components Gt55n06 60V 53A Power Transistor Mosfet Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5469. Silicon Triode Transistor G2003A 190V 3A Mosfet for Integrated Circuits [Aug 19, 2022]
[Aug 19, 2022] Product Description Silicon Triode Transistor G2003A 190V 3A MOSFET for integrated circuits Part Number G2003A VDSS 190V ID 3A RDS 430mΩ @ vgs=10V Vth 1.7V Package SOT-23-3 Ciss 580 pF Crss 3 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5470. 200V Mosfet for LED TV Backlight & TV Flicker Free 5n20A 5A N-Channel to-252 [Aug 19, 2022]
[Aug 19, 2022] Product Description 200V Mosfet for led TV backlight & TV Flicker free 5N20A 5A N-channel TO-252 Part Number 5N20A VDSS 200V ID 5A RDS 440mΩ @ vgs=10V Vth 1.55V Package TO-252 Ciss 255 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5471. Mosfet Irfp150n Replacement G50n10 100V 50A to-220 for DC/DC [Jun 23, 2022]
[Jun 23, 2022] MOSFET IRFP150N Replacement G50N10 100V 50A TO-220 for DC/DC General Description The G50N10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5472. Factory Directly Dual N Channel 60V 4.5A Sop-8 Package Mosfet with Free Sample [Jun 23, 2022]
[Jun 23, 2022] Factory Directly Dual N Channel 60V 4.5A SOP-8 Package Mosfet with Free Sample General Description The G05N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5473. Fast Charge Application Goford Mosfet G30n04D3 40V 30A Dfn3X3-8L Package Mosfet [Jun 23, 2022]
[Jun 23, 2022] Fast Charge Application GOFORD MOSFET G30N04D3 40V 30A DFN3X3-8L Package MOSFET General Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5474. Hot Sell Gt090n06D52 Mosfet 60V 40A Dual N Channel Mosfet [Jun 14, 2022]
[Jun 14, 2022] Hot Sell GT090N06D52 Mosfet 60V 40A Dual N Channel MOSFET General Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5475. Electronic Component N-CH 60V 3A Ao3422 Ao3460 Substitute Mosfet [Jun 10, 2022]
[Jun 10, 2022] Electronic Component N-CH 60V 3A Ao3422 Ao3460 Substitute Mosfet General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
