Jiangsu Profile
Famous Export Brand
Product List
2011. 580W P-Type 620W Dual Use Solar Panel for Livestock Grazing Land 
[Mar 23, 2026]
[Mar 23, 2026] Product Description Delivers Reliable Performance Over Time The 620W PERC module delivers exceptional performance, characterized by its high power output and superior efficiency, 22.0%. Its core advantage lies in the ...
Company: Wuxi Taoistic New Energy Co., Ltd.
2012. 460W All-Black Solar Panel Low Temp Coefficient for Residential Roofs [Dec 10, 2025]
[Dec 10, 2025] Product Description Delivers Reliable Performance Over Time PERC stands for Passivated Emitter and Rear Cell. It's not just a buzzword; it's a fundamental improvement on traditional solar cells. A passivation layer on ...
Company: Wuxi Taoistic New Energy Co., Ltd.
2013. 460W Solar Balcony Kit Module Perc 430W CE CQC Safety Certified [Dec 10, 2025]
[Dec 10, 2025] Product Description Delivers Reliable Performance Over Time PERC stands for Passivated Emitter and Rear Cell. It's not just a buzzword; it's a fundamental improvement on traditional solar cells. A passivation layer on ...
Company: Wuxi Taoistic New Energy Co., Ltd.
2014. 515W Monocrystalline Panel 21.30% Efficiency Ideal for Utility-Scale Solar Farms [Dec 08, 2025]
[Dec 08, 2025] Product Description Delivers Reliable Performance Over Time PERC stands for Passivated Emitter and Rear Cell. It's not just a buzzword; it's a fundamental improvement on traditional solar cells. A passivation layer on ...
Company: Wuxi Taoistic New Energy Co., Ltd.
2015. Infrared Heat Lamp Parts Lighting Holders [Sep 10, 2026]
[Sep 10, 2026] Product Description: Halogen quartz heater is made of tungsten wire, put the wire in quartz tube,through lamp wire make light. It is also a kind of shortwave infrared emitter. It can provide a very high energy source ...
2016. 40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H120M2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
2017. 60A 650V Bipolar Transistor DHG60T65D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...
2018. 40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
2019. 80A 650V Trench FS IGBT DGC80F65M TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...
2020. 75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
2021. 60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
2022. 75A 650V Half Bridge IGBT Module DGA75H65M2T 34MM [Aug 09, 2026]
[Aug 09, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...
2023. 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
2024. 60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC60F65M TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
2025. 6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
