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230 Volts Pfqe Pillared Full Quartz Element for Plastic
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2161.

230 Volts Pfqe Pillared Full Quartz Element for Plastic Open Details in New Window [Jun 17, 2025]

Product Description 245*60mm 122*60mm 60*60mm245*60mm 122*60mm 60*60mm Electric Infrared Quartz heating plate With K type thermocouple range consists of cassette style elements constructed with ...

Company: Yancheng Hongtai Alloy Electric Apparatus Co., Ltd.

Ax-Mx-34-240V 400W Ax-Mx-34-120V 400W Infrared Quartz Heating Tube for Water Meter
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2162.

Ax-Mx-34-240V 400W Ax-Mx-34-120V 400W Infrared Quartz Heating Tube for Water Meter Open Details in New Window [Jun 04, 2025]

AX-MX-34-240V 400W AX-MX-34-120V 400W infrared lamps Quartz Heating Tube for Water meter Compared with convection heating and traditional heating, radiation is a powerful and efficient heating method. In fact, the ...

Company: Huaian Yinfrared Heating Tech Co., Ltd.

Industrial Infrared 245*85mm Curved Ceramic IR Heating Element Far Infrared Ceramic Heater
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2163.

Industrial Infrared 245*85mm Curved Ceramic IR Heating Element Far Infrared Ceramic Heater Open Details in New Window [Jun 17, 2024]

Ceramic infrared heater is made out of ceramics. 1. Radioactive properties: a maximum monochromatic radiation components reached 0.9, the normal total radiation rate is greater than 0.83. 2. Thermal response time: ...

Company: Yancheng Vinson Technology Co., Ltd.

220V Electric Resistance Flat Ceramic Far Infrared Heater
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2164.

220V Electric Resistance Flat Ceramic Far Infrared Heater Open Details in New Window [Apr 15, 2024]

Ceramic infrared heater is made out of ceramics. 1. Radioactive properties: a maximum monochromatic radiation components reached 0.9, the normal total radiation rate is greater than 0.83. 2. Thermal response time: ...

Company: Yancheng Vinson Technology Co., Ltd.

100W 200W 300W 400W Far Infrared Electric IR Ceramic Heater 220V for Furnace Ovens
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2165.

100W 200W 300W 400W Far Infrared Electric IR Ceramic Heater 220V for Furnace Ovens Open Details in New Window [Oct 16, 2023]

245*60mm Trough/Hollow/Flat Shape Electric Infrared Ceramic Heater Product Description Size 245*60mm Voltage 110-440v Material Imported Ceramic Clay Power 125-1500W Color White, Black, Yellow Production ...

Company: Yancheng Hongtai Alloy Electric Apparatus Co., Ltd.

Wholesale Sk15 Ceramic Gold Halogen Infrared Heating Lamp for Blow Molding Machine
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2166.

Wholesale Sk15 Ceramic Gold Halogen Infrared Heating Lamp for Blow Molding Machine Open Details in New Window [Sep 16, 2026]

Product Description: Halogen quartz heater is made of tungsten wire, put the wire in quartz tube,through lamp wire make light. It is also a kind of shortwave infrared emitter. It can provide a very high energy source ...

Company: Lianyungang Yuanda Quartz Product Co., Ltd.

Short Wave Half Gold Twin Tube Infrared Heating Element Lamp for Pet Blowing Machine
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2167.

Short Wave Half Gold Twin Tube Infrared Heating Element Lamp for Pet Blowing Machine Open Details in New Window [Sep 16, 2026]

Product Description: Halogen quartz heater is made of tungsten wire, put the wire in quartz tube,through lamp wire make light. It is also a kind of shortwave infrared emitter. It can provide a very high energy source ...

Company: Lianyungang Yuanda Quartz Product Co., Ltd.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F65M2 TO-247
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2168.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F65M2 TO-247 Open Details in New Window [Sep 04, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H120M2 TO-247
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2169.

40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H120M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Bipolar Transistor DHG60T65D TO-3PN
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2170.

60A 650V Bipolar Transistor DHG60T65D TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247
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2171.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 650V Trench FS IGBT DGC80F65M TO-247
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2172.

80A 650V Trench FS IGBT DGC80F65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247
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2173.

75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247
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2174.

60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Half Bridge IGBT Module DGA75H65M2T 34MM
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2175.

75A 650V Half Bridge IGBT Module DGA75H65M2T 34MM Open Details in New Window [Aug 09, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd