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1700V IGBT Module Dgc75c170m2t
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2296.

1700V IGBT Module Dgc75c170m2t Open Details in New Window [Jun 25, 2025]

75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
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2297.

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V 34mm Half Bridge IGBT Module
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2298.

75A 650V 34mm Half Bridge IGBT Module Open Details in New Window [Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d
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2299.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247
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2300.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247
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2301.

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
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2302.

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
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2303.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
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2304.

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m
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2305.

80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Far Infrared Silicon Carbide Tube Heater
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2306.

Far Infrared Silicon Carbide Tube Heater Open Details in New Window [Jun 17, 2025]

Sauna Room Ceramic Infrared Tube Heater Technical Parameters Tube Material Carbon silicone ceramic wavelength 3 μ~ 50 μ Diameter 10mm, 12mm, 14mm, 16mm, 20mm and other can be ...

Company: Yancheng Hongtai Alloy Electric Apparatus Co., Ltd.

16mm Dia Infrared Ceramic Heating Tube for Car Paint
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2307.

16mm Dia Infrared Ceramic Heating Tube for Car Paint Open Details in New Window [Oct 11, 2023]

Sauna Room Ceramic Infrared Tube Heater Product Parameters Tube Material Carbon silicone ceramic wavelength 3 μ~ 50 μ Diameter 10mm, 12mm, 14mm, 16mm, 20mm and other can be ...

Company: Yancheng Hongtai Alloy Electric Apparatus Co., Ltd.

Far Infrared Heating Element Heater for Digital Printer
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2308.

Far Infrared Heating Element Heater for Digital Printer Open Details in New Window [Oct 10, 2023]

Sauna Room Ceramic Infrared Tube Heater Product Parameters Tube Material Carbon silicone ceramic wavelength 3 μ~ 50 μ Diameter 10mm, 12mm, 14mm, 16mm, 20mm and other can be ...

Company: Yancheng Hongtai Alloy Electric Apparatus Co., Ltd.

Electric Far Infrared Ceramic Heater Element with Type K Thermocouple
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2309.

Electric Far Infrared Ceramic Heater Element with Type K Thermocouple Open Details in New Window [Oct 07, 2023]

Electric far infrared ceramic heater element with type k thermocouple Product Description Size 245*60mm Voltage 110-440v Material Imported Ceramic Clay Power 125-1500W Color White, Black, ...

Company: Yancheng Hongtai Alloy Electric Apparatus Co., Ltd.

Black Body Ceramic Infrared Sauna Tube Heater with Reflector
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2310.

Black Body Ceramic Infrared Sauna Tube Heater with Reflector Open Details in New Window [Oct 07, 2023]

Sauna Room Ceramic Infrared Tube Heater Product Parameters Tube Material Carbon silicone ceramic wavelength 3 μ~ 50 μ Diameter 10mm, 12mm, 14mm, 16mm, 20mm and other can be ...

Company: Yancheng Hongtai Alloy Electric Apparatus Co., Ltd.