Jiangsu Profile
Product List
3511. 245X60mm 250W Red Color Electric Infrared Ceramic IR Curved Plate Heater for Sauna House Heating 
[Apr 25, 2023]
[Apr 25, 2023] Ceramic infrared heater is made out of ceramics. 1. Radioactive properties: a maximum monochromatic radiation components reached 0.9, the normal total radiation rate is greater than 0.83. 2. Thermal response time: ...
Company: Yancheng Vinson Technology Co., Ltd.
3512. White Color 220/230V 500W 245X60mm Infrared Heater Electric Heating Element IR Ceramic Heater [Apr 25, 2023]
[Apr 25, 2023] Ceramic infrared heater is made out of ceramics. 1. Radioactive properties: a maximum monochromatic radiation components reached 0.9, the normal total radiation rate is greater than 0.83. 2. Thermal response time: ...
Company: Yancheng Vinson Technology Co., Ltd.
3513. Vinson Customized Electric Industrial Ceramic Far Infrared Heating Elements with Thermocouple for ... [Apr 25, 2023]
[Apr 25, 2023] Ceramic infrared heater is made out of ceramics. 1. Radioactive properties: a maximum monochromatic radiation components reached 0.9, the normal total radiation rate is greater than 0.83. 2. Thermal response time: ...
Company: Yancheng Vinson Technology Co., Ltd.
3514. Vinson 220V 200W 400W 600W Customized Electric Far Infrared Sauna IR Plate Ceramic Heater for ... [Apr 25, 2023]
[Apr 25, 2023] Ceramic infrared heater is made out of ceramics. 1. Radioactive properties: a maximum monochromatic radiation components reached 0.9, the normal total radiation rate is greater than 0.83. 2. Thermal response time: ...
Company: Yancheng Vinson Technology Co., Ltd.
3515. 220V 200W 300W 350W 400W 500W 650W Industrial Electric Far Heating Element IR Ceramic Infrared ... [Apr 25, 2023]
[Apr 25, 2023] Ceramic infrared heater is made out of ceramics. 1. Radioactive properties: a maximum monochromatic radiation components reached 0.9, the normal total radiation rate is greater than 0.83. 2. Thermal response time: ...
Company: Yancheng Vinson Technology Co., Ltd.
3516. Portable CNC 4540 7W 15W 20W 40W Diode Laser Engraving Marking Machine for Plastic and Stainless ... [Feb 22, 2022]
[Feb 22, 2022] Product show Paramters * Laser power: 7W/ 15W/20W/ 40W * Wave Length: 445 ± 5nm * Input Format: NC, BMP, JPG, PNG, DXF, etc. * Machine power: 12V 5A * Carving Speed: 0-50000mm/min * Software: MAC ...
Company: Changzhou Lunyee Electromechanical Manufacturing Co., Ltd.
3517. 600A 650V Half Bridge Module Dgd600h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
3518. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
3519. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
3520. 300A 1200V Half Bridge Module Dgd300h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
3521. 900A 1200V Half Bridge Module Dgd900h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
3522. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
3523. 400A 650V Half Bridge Module Dgd400h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
3524. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
3525. 600A 1700V Half Bridge Module Dgd600h170L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
