Jiangsu Profile
Product List
661. Active Components N-Channel Mosfet 60V Transistor G110n06 
[Jun 10, 2022]
[Jun 10, 2022] Active Components N-Channel MOSFET 60V Transistor G110N06 General Description The G110N06uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
662. Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter [Jun 10, 2022]
[Jun 10, 2022] SIRA52DP Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
663. Discrete Component Irf7413z Equivalent Transistor G16n03s N Channel 30V 16A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Discrete Component IRF7413Z Equivalent Transistor G16N03S N Channel 30V 16A Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
664. Si4931dy Substitute G11s Mosfet Transistor P Channel 12V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Si4931DY Substitute G11S Mosfet Transistor P Channel 12V SOP-8 General Description The G11S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
665. RoHS Compliant N Channel 100V 75A to-252 Package Mosfet [Jun 10, 2022]
[Jun 10, 2022] RoHS Compliant N Channel 100V 75A TO-252 Package Mosfet General Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
666. Power Mosfet Transistor 200V 18A Dpak Mosfet for LED Driver [Jun 10, 2022]
[Jun 10, 2022] Power MOSFET Transistor 200V 18A DPAK MOSFET for Led Driver General Description The 18N20 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
667. Electronic Component Manufacturer 100V Sgt Mosfet for Solar Inverter [Jun 10, 2022]
[Jun 10, 2022] Electronic Component Manufacturer 100V SGT MOSFET for Solar Inverter General Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
668. ISO9001 Approved 30V 48A Dfn Package N Channel Mosfet for Pd [Jun 10, 2022]
[Jun 10, 2022] ISO9001 Approved 30V 48A Dfn Package N Channel Mosfet for Pd General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
669. Discrete Component 2301 P Channel 20V 3A Mosfet for PWM Application [Jun 10, 2022]
[Jun 10, 2022] AO3402 Substitute G2304 30V 3.6A MOSFET Transistor with SOT-23 Package General Description The 2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
670. ISO9001 Certificate Factory 200V 5A Dpak Mosfet for LED Dimming [Jun 10, 2022]
[Jun 10, 2022] ISO9001 Certificate Factory 200V 5A DPAK MOSFET for LED Dimming General Description The 5N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
671. Factory Directly N-Channel Dfn Package 60V 95A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Factory Directly N-Channel Dfn Package 60V 95A Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
672. Si6423dq Equivalent Transistor G08p02ts P Mosfet of 20V 8.2A [Jun 10, 2022]
[Jun 10, 2022] Si6423DQ Equivalent Transistor G08P02TS P MOSFET of 20V 8.2A General Description The G08P02TS uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
673. Ao3402 Substitute Transistor 2304 30V 3.6A Sot-23 Mosfet [Jun 10, 2022]
[Jun 10, 2022] AO3402 Substitute Transistor 2304 30V 3.6A SOT-23 MOSFET General Description The G2304 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
674. Professional IC Mosfet Transistor 03n06 60V 3A with Sot-23-3L Package [Jun 10, 2022]
[Jun 10, 2022] Professional IC Mosfet Transistor 03N06 60V 3A with SOT-23-3L Package General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
675. Mosfet Transistor 30V 50A N-Channel Parts with to-252 Package [May 27, 2022]
[May 27, 2022] Mosfet Transistor 30V 50A N-Channel Parts with TO-252 Package General Description The 50N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
