Jiangsu Profile
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Product List
6586. 75A 1700V IGBT MODULE DGA75H170M2T 34MM 
[Jul 21, 2026]
[Jul 21, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6587. 50A 1200V Half Bridge IGBT Module G50N120D 34MM [Jul 21, 2026]
[Jul 21, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6588. Size 35X50mm Uucap 450V470UF Professional Inverter Aluminum Electrolytic Capacitor 560UF&680UF [May 08, 2026]
[May 08, 2026] Product Description Specification Company Profile Certifications Exhibition Product packaging FAQ 1. What are the advantages of your aluminum electrolytic capacitors? Our aluminum electrolytic capacitors feature ...
Company: Suzhou UUCAP Manufacturing Co., Ltd.
6589. 30A 650V N-Channel SiC Power MOSFET DCC060M65G2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6590. 60A 300V Fast Recovery Diode MUR6030NCA TO-3P [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
6591. 30A 120V Insulated Gate Bipolar Transistor IGBT G30N120D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
6592. 115A 1200V N-Channel SiC Power MOSFET DHC2M016120Q TO-247 [Jul 21, 2026]
[Jul 21, 2026] 115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
6593. 1200V N-Channel SiC Power MOSFET DCCF030M120G2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6594. 30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
6595. 30A 650V N-Channel SiC Power MOSFET DCCF060M65G2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
6596. 18A 1200V N-Channel SiC Power MOSFET DCC160M120G1 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6597. 5A 1700V N-Channel SiC Power MOSFET DCCF1K0M170G1 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6598. 75A 1200V IGBT Module DGC75C120M2T ECONOPACK2 [Jul 21, 2026]
[Jul 21, 2026] 75A 1200V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
6599. 10A 650V N-Channel Enhancement Mode Power MOSFET 10N65 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low switching loss Low ON Resistance (Rdson≤5.5mΩ) Low Gate Charge (Typ: 48nC) Low Reverse Transfer Capacitances (Typ: 210pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...
6600. 40A 600V Insulated Gate Bipolar Transistor IGBT G40N60D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
