Jiangsu Profile

Product List
15166. 100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
15167. NPN Epitaxial Silicon Transistor Bu406 to-220c
[Jun 23, 2025]

Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
15168. 150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
15169. 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
15170. 100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
15171. 100V 50A N-Mosfet Dsd190n10L3
[Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
15172. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252
[Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
15173. 85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
15174. 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
15175. 100V 50A N-Mosfet Dsb190n10L3
[Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
15176. 150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...
15177. 100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...
15178. 54A 30V N-Channel Enhancement Mode Power Mosfet Dh060n03r
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 54 A (T=100ºC) 35 A Drain ...
15179. 40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...
15180. Hot Sale Wxdh Brand Triac T0410 to-251
[Jun 23, 2025]

Description 4A TRIAC series triacs with low holding and latchingcurrent are especially recommended for use onmiddle and small resistance type power load. 2 Features High current output up to 4A Low ...
