Jiangsu Profile
Product List
22741. High Quality SCR Thyristor for Power Control Fast Delivery Energy Saving for Phase Control ... 
[Jan 04, 2026]
[Jan 04, 2026] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
22742. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
22743. 40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
22744. 100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
22745. 50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
22746. 90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
22747. 90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
22748. High Efficiency SCR Thyristor Inverter for Phase Control [Apr 08, 2026]
[Apr 08, 2026] Product name Factory price high frequency power inverter thyristor r1275 Color Silver Usage HVDC transmission, reactive power compensation, air conditioning, switching switch, motor excitation, induction heating, ...
22749. 100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
22750. 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
22751. 150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
22752. 100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
22753. NPN Epitaxial Silicon Transistor Bu406 to-220c [Jun 23, 2025]
[Jun 23, 2025] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
22754. 4/6/8/12 Inch Silicon Wafer for Mosfet Chips [Jan 03, 2026]
[Jan 03, 2026] Basic Info Product Description Silicon Wafer Silicon Si uses: used as a semiconductor material high power transistor rectifier ...
Company: Wuxi Kingful Corporation., Ltd
22755. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 [Nov 08, 2025]
[Nov 08, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
