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23956. 50A 30V N-Channel Enhancement Mode Power MOSFET DHB50N03 TO-251B 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
23957. 90A 30V N-Channel Enhancement Mode Power MOSFET DHD90N03 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
23958. 50A 30V N-Channel Enhancement Mode Power MOSFET DHD50N03 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
23959. 90A 30V N-Channel Enhancement Mode Power MOSFET DHB90N03 TO-251B [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
23960. 60A 100V N-Channel Enhancement Mode Power MOSFET DSB150N10L3 TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
23961. 82A 40V N-Channel Enhancement Mode Power MOSFET DSD065N04LA TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
23962. 100A 100V N-Channel Enhancement Mode Power MOSFET DSG070N10L3 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
23963. 81A 30V N-Channel Enhancement Mode Power MOSFET DHP90N03 DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHP90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
23964. 103A 100V N-Channel Enhancement Mode Power MOSFET DSE065N10L3A TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
23965. Zhendi New Original 650V 13A To252 Sst65r360s2 N-Channel SMD Mosfet Transistor [Jun 22, 2026]
[Jun 22, 2026] Product Description Product Features With a meticulous Single Mesa structure, our diode rectifier MOSFET transistor is engineered for peak performance. Featuring an advanced table glass passivation process, this ...
23966. Factory Direct SCR Thyristor Semiconductor Module Standard Mounting Type for Optimal Efficiency [Mar 30, 2026]
[Mar 30, 2026] Product Description Factory Direct Pricing: As a distinguished direct manufacturer, Zhenjiang Zhendi Electric Technology Co., Ltd proudly offers you factory direct pricing, cutting out the middleman to provide you with ...
23967. 150A 30V N-Channel Enhancement Mode Power MOSFET DTG023N03L TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
23968. 215A 85V N-Channel Enhancement Mode Power MOSFET DH025N08 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
23969. 115A 150V N-Channel Enhancement Mode Power MOSFET DSG092N15N3A TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
23970. 50A 100V N-Channel Enhancement Mode Power MOSFET DSD190N10L3 [Jul 21, 2026]
[Jul 21, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
