Jiangsu Profile
Product List
3961. Mosfet G20n06j 60V to-251 Package Mosfet with ISO9001 Certificate 
[Mar 18, 2022]
[Mar 18, 2022] MOSFET G20N06J 60V TO-251 Package MOSFET with ISO9001 Certificate General Description The G20N06J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3962. Mosfet Manufacturer G30n03D3 30V 30A Dfn3X3 Mosfet for Pd [Mar 18, 2022]
[Mar 18, 2022] MOSFET Manufacturer G30N03D3 30V 30A DFN3X3 MOSFET for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3963. Electric Components G30n03A 30V 30A Dfn3*3-8L Mosfet Transistor for SMPS [Mar 18, 2022]
[Mar 18, 2022] Electric Components G30N03A 30V 30A DFN3*3-8L MOSFET Transistor for SMPS General Description The G30N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3964. Dmg3402L-7 Equivalent Transistor Mosfet G3404 of 30V 5.8A Sot-23 [Nov 14, 2023]
[Nov 14, 2023] DMG3402L-7 Equivalent Transistor MOSFET G3404 of 30V 5.8A SOT-23 General Description The G3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3965. 150V 60A Power Mosfet N Channel to-220 Gt190n15t Mosfet [Sep 09, 2022]
[Sep 09, 2022] 150V 60A Power MOSFET N Channel TO-220 GT190N15T MOSFET General Description The GT190N15T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3966. Electronic Component N-CH 60V 3A Ao3422 Ao3460 Substitute Mosfet [Jun 10, 2022]
[Jun 10, 2022] Electronic Component N-CH 60V 3A Ao3422 Ao3460 Substitute Mosfet General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3967. Discrete Component G16p03s P Channel 30V 16A Mosfet for Mobile Fast Charger [May 24, 2022]
[May 24, 2022] Discrete Component G16P03S P Channel 30V 16A Mosfet for Mobile Fast Charger General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3968. Goford Mosfet G30n03A 30V 30A Dfn3*3-8L Mosfet Transistor for SMPS [Mar 18, 2022]
[Mar 18, 2022] GOFORD MOSFET G30N03A 30V 30A DFN3*3-8L MOSFET Transistor for SMPS General Description The G30N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3969. G180n03D5 30V 170A Aons66612t Substitute Mosfet with Dfn Package [Jun 14, 2022]
[Jun 14, 2022] G180N03D5 30V 170A AONS66612T Substitute MOSFET with DFN Package General Description The G180N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3970. Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Mosfet for Mobile Fast Charger [Jun 10, 2022]
[Jun 10, 2022] AO4407 Substitute MOSFET G16P03S P-CH 30V 16A Transistor for Mobile Fast Charger General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3971. Fast Shipping Dual N Channel 60V 4.5A Sop-8 Package Mosfet [Aug 19, 2022]
[Aug 19, 2022] Fast Shipping Dual N Channel 60V 4.5A Sop-8 Package Mosfet General Description The G05N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3972. G30n03A 30V 30A N Mosfet for Pd [Aug 19, 2022]
[Aug 19, 2022] Product Description G30N03A 30V 30A N Mosfet for Pd Part Number G30N03A VDSS 30V ID 30A RDS 9.2mΩ @ vgs=4.5V Vth 1.5V Package DFN3*3 Ciss 1490 pF Crss 135 pF Datasheet You may ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3973. Gt45n06 Goford Mosfet 60V 45A Dfn Package [Aug 19, 2022]
[Aug 19, 2022] Product Description Gt45n06 Goford Mosfet 60V 45A Dfn Package Part Number GT45N06 VDSS 60V ID 45A RDS 6.8mΩ @ vgs=10V Vth 1.7V Package DFN3*3 Ciss 1988 pF Crss 14 pF Datasheet You may ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3974. Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Transistor [Aug 19, 2022]
[Aug 19, 2022] AO4407 Substitute MOSFET G16P03S P-CH 30V 16A Transistor General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3975. Macmic Diode Original Supply [Nov 26, 2024]
[Nov 26, 2024] We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
