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25A 120V Insulated Gate Bipolar Transistor IGBT G25T120D TO-247
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15391.

25A 120V Insulated Gate Bipolar Transistor IGBT G25T120D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 50 A Collector Current (Tc=100ºC) 25 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 300V Fast Recovery Diode MUR80FU30DCT TO-3P
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15392.

80A 300V Fast Recovery Diode MUR80FU30DCT TO-3P Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 600V N-Channel Enhancement Mode Power MOSFET F7N60 TO-220F
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15393.

7A 600V N-Channel Enhancement Mode Power MOSFET F7N60 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 600V Fast Recovery Diode MUR40FU60DCT TO-3PN
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15394.

40A 600V Fast Recovery Diode MUR40FU60DCT TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V DC Blocking Voltage VR 600 V Average Rectified Forward ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 150V Schottky Barrier Diode MBR20R150CT TO-220
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15395.

20A 150V Schottky Barrier Diode MBR20R150CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 60V Schottky Barrier Diode MBR1060CT TO-220
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15396.

10A 60V Schottky Barrier Diode MBR1060CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V SiC Schottky Barrier Diode DCD10D65G4 TO-252
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15397.

10A 650V SiC Schottky Barrier Diode DCD10D65G4 TO-252 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 45V Schottky Barrier Diode MBRF1045CT TO-220F
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15398.

10A 45V Schottky Barrier Diode MBRF1045CT TO-220F Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Schottky Barrier Diode MBR20R100CT TO-220
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15399.

20A 100V Schottky Barrier Diode MBR20R100CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
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15400.

10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR6030NCA TO-3P
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15401.

60A 300V Fast Recovery Diode MUR6030NCA TO-3P Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 45V Schottky Barrier Diode MBR4045CT TO-263
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15402.

40A 45V Schottky Barrier Diode MBR4045CT TO-263 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode MUR1040 TO-220
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15403.

10A 400V Fast Recovery Diode MUR1040 TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V Schottky Barrier Diode MBR40100CT TO-220
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15404.

40A 100V Schottky Barrier Diode MBR40100CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 700V Fast Recovery Diode MUR1070 TO-220
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15405.

10A 700V Fast Recovery Diode MUR1070 TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd