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60A 600V Fast Recovery Diode MUR60FU60NCT TO-3PN
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17881.

60A 600V Fast Recovery Diode MUR60FU60NCT TO-3PN Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGN40F65M2 TO-3PN
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17882.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGN40F65M2 TO-3PN Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Fast Recovery Diode MUR40120 TO-220
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17883.

40A 1200V Fast Recovery Diode MUR40120 TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V SiC Schottky Barrier Diode DCCT40D120G4 TO-247
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17884.

40A 1200V SiC Schottky Barrier Diode DCCT40D120G4 TO-247 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Silicon Controlled Rectifier Thyristor BT151X TO-220F
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17885.

Silicon Controlled Rectifier Thyristor BT151X TO-220F Open Details in New Window [Jul 21, 2026]

Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 400V Fast Recovery Diode MUR1540 TO-220
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17886.

15A 400V Fast Recovery Diode MUR1540 TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 400 typ 450 IR(uA)25ºC max 20 VF (V) 25ºC typ. 1.2 max 1.4 IF(A) Single chip package 7.5 IF(A) Dual chip package 15 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1.0A 5V Positive Voltage Regulator IC 78M05A TO-252B
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17887.

1.0A 5V Positive Voltage Regulator IC 78M05A TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 200V Fast Recovery Diode MUR1620CT TO-220
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17888.

16A 200V Fast Recovery Diode MUR1620CT TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1.0A 12V Positive Voltage Regulator IC 78M12A TO-252
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17889.

1.0A 12V Positive Voltage Regulator IC 78M12A TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR6030DCS TO-3P
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17890.

60A 300V Fast Recovery Diode MUR6030DCS TO-3P Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 600V N-Channel Enhancement Mode Power MOSFET F7N60 TO-220F
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17891.

7A 600V N-Channel Enhancement Mode Power MOSFET F7N60 TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 600V Insulated Gate Bipolar Transistor IGBT G40N60D TO-247
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17892.

40A 600V Insulated Gate Bipolar Transistor IGBT G40N60D TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 200V Schottky Barrier Diode MBR40200NCT TO-263
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17893.

40A 200V Schottky Barrier Diode MBR40200NCT TO-263 Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 150V Schottky Barrier Diode MBRF10150CT TO-220F
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17894.

10A 150V Schottky Barrier Diode MBRF10150CT TO-220F Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 60V Schottky Barrier Diode MBR6060NCT TO-3PN
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17895.

60A 60V Schottky Barrier Diode MBR6060NCT TO-3PN Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd