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16A 100V Schottky Barrier Diode MBR16100CT TO-220
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18301.

16A 100V Schottky Barrier Diode MBR16100CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 400V Fast Recovery Diode MUR80FU40DCT TO-3P
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18302.

80A 400V Fast Recovery Diode MUR80FU40DCT TO-3P Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 600V Fast Recovery Diode MUR1560 TO-220
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18303.

15A 600V Fast Recovery Diode MUR1560 TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V Trench FS IGBT DHG50T65LBBW TO-247
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18304.

50A 650V Trench FS IGBT DHG50T65LBBW TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 200V Schottky Barrier Diode MBRF20200CT TO-220F
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18305.

20A 200V Schottky Barrier Diode MBRF20200CT TO-220F Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG60N65D
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18306.

60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG60N65D Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Automotive Grade Power MOSFET G40N120D TO-247
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18307.

40A 1200V Automotive Grade Power MOSFET G40N120D TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Schottky Barrier Diode MBR20100CS
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18308.

20A 100V Schottky Barrier Diode MBR20100CS Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCCT20D65G4 TO-247
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18309.

20A 650V SiC Schottky Barrier Diode DCCT20D65G4 TO-247 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 60V P-Channel Enhancement Mode Power MOSFET DTD125P06LA TO-252
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18310.

85A 60V P-Channel Enhancement Mode Power MOSFET DTD125P06LA TO-252 Open Details in New Window [Jul 21, 2026]

Features High density cell design for ultra low Rdson 175°C operating temperature Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 80V Schottky Barrier Diode MBR20R80CT TO-220
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18311.

20A 80V Schottky Barrier Diode MBR20R80CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 80 typ.90 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.58 max 0.7 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode MBR30R100CT TO-220
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18312.

30A 100V Schottky Barrier Diode MBR30R100CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 45V Schottky Barrier Diode MBR20R45CT TO-220C
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18313.

20A 45V Schottky Barrier Diode MBR20R45CT TO-220C Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode MBRD30100CT TO-252B
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18314.

30A 100V Schottky Barrier Diode MBRD30100CT TO-252B Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 400V Fast Recovery Diode MUR1640CT TO-220
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18315.

16A 400V Fast Recovery Diode MUR1640CT TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd