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60A 200V Schottky Barrier Diode MBR60200CT TO-220C
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55096.

60A 200V Schottky Barrier Diode MBR60200CT TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 600V Fast Recovery Diode MURF3060 TO-220
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55097.

30A 600V Fast Recovery Diode MURF3060 TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Schottky Barrier Diode MBRF2060CT TO-220F
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55098.

20A 60V Schottky Barrier Diode MBRF2060CT TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 48 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 10 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 300V Fast Recovery Diode MUR80FU30CT TO-247
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55099.

80A 300V Fast Recovery Diode MUR80FU30CT TO-247 Open Details in New Window [Jul 21, 2026]

Features Low power loss high efficiency Low forward voltage high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Insulated Gate Bipolar Transistor IGBT G60T65D TO-3P
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55100.

60A 650V Insulated Gate Bipolar Transistor IGBT G60T65D TO-3P Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 150V Schottky Barrier Diode MBR20150CT TO-220
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55101.

20A 150V Schottky Barrier Diode MBR20150CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 150V Schottky Barrier Diode MBR30150CT TO-220
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55102.

30A 150V Schottky Barrier Diode MBR30150CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode MUR1040CT TO-220
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55103.

10A 400V Fast Recovery Diode MUR1040CT TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220
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55104.

7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 400V Fast Recovery Diode MUR3040CT TO-263
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55105.

30A 400V Fast Recovery Diode MUR3040CT TO-263 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 200V Fast Recovery Diode MUR6020DCT TO-3P
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55106.

60A 200V Fast Recovery Diode MUR6020DCT TO-3P Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Schottky Barrier Diode MBR20R100CT TO-220
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55107.

20A 100V Schottky Barrier Diode MBR20R100CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 45V Schottky Barrier Diode MBR4045CT TO-263
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55108.

40A 45V Schottky Barrier Diode MBR4045CT TO-263 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V Schottky Barrier Diode MBR40100CT TO-220
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55109.

40A 100V Schottky Barrier Diode MBR40100CT TO-220 Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 700V Fast Recovery Diode MUR1070 TO-220
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55110.

10A 700V Fast Recovery Diode MUR1070 TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd