Jiangsu Profile
Product List
32776. Xk2525-20 Gantry Structure CNC Boring and Milling Machine Center 
[Mar 13, 2024]
[Mar 13, 2024] Product Description 1.The overall layout of the equipment is a gantry structure. A fixed workbench is used. The workbench is in the form of a T-slot. The movable crossbeam moves horizontally and longitudinally along ...
Company: Nanjing Prastar Industrial Co., Ltd.
32777. CE Plate Rolling Machine 20mm Thickness Plate Quicking Rolling, 2000mm Working Length [Sep 13, 2023]
[Sep 13, 2023] CE Plate Rolling Machine 20mm Thickness Plate Quicking Rolling, 2000mm working Length Main technology data of machine No. Name Unit Remark Model: W12-20X2000 1 Maxi Rolling Thickness mm 20 ...
32778. Hot Deal KIA EV5 530 EV Car 530 Km Single Motor Rwd New Energy Vehicle Cheap Price Smart Car with ... [Sep 10, 2026]
[Sep 10, 2026] Product Description Intelligent Electric SUV with Long Range & Premium Comfort Modern electric SUV design inspired by Kia's latest EV lineup with futuristic styling Long driving range with advanced battery technology ...
32779. 100A 40V N-Channel Enhancement Mode Power MOSFET DSP018N04LA DFN5X6 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 100 A Drain ...
32780. 99A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10P DFN5X6 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 99 A (T=100ºC) 70 A Drain ...
32781. 175A 80V N-Channel Enhancement Mode Power MOSFET DHS035N88E TO-263 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
32782. 205A 85V N-Channel Enhancement Mode Power MOSFET DHS025N88E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
32783. 140A 85V N-Channel Enhancement Mode Power MOSFET DHS043N85E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
32784. 160A 120V N-Channel Enhancement Mode Power MOSFET DHS044N12E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...
32785. 130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
32786. 110A 85V N-Channel Enhancement Mode Power MOSFET DHS055N85E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS055N85/ DHS055N85E DHS055N85D/ DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
32787. 180A 100V N-Channel Enhancement Mode Power MOSFET DSE026N10NA TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...
32788. 250A 85V N-Channel Enhancement Mode Power MOSFET DHS020N88E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
32789. 110A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
32790. 120A 98V N-Channel Enhancement Mode Power MOSFET DHS046N10E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...
