Jiangsu Profile
Product List
34786. Heavy Duty High Rigidity Xz130 CNC Floor Type Horizontal Milling Boring Machine with Rotary Table 
[Mar 30, 2026]
[Mar 30, 2026] 1.INFORMATION OF CNC BORING AND MILLING MACHINE Product Description DESCRIPTION The boring and milling machine combines the processing methods of boring and milling machines, and is mainly used for boring and ...
34787. Xz-100 Milling and Turning Machining Center High Speed High Precision Machine/Lathe/Milling ... [Mar 30, 2026]
[Mar 30, 2026] 1.INFORMATION OF CNC BORING AND MILLING MACHINE Product Description DESCRIPTION The boring and milling machine combines the processing methods of boring and milling machines, and is mainly used for boring and ...
34788. 60A 100V N-Channel Enhancement Mode Power MOSFET DSD150N10L3 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
34789. 120A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04B TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...
34790. 180A 40V N-Channel Enhancement Mode Power MOSFET DSG019N04L TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...
34791. 170A 100V N-Channel Enhancement Mode Power MOSFET DSG030N10N3 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
34792. 150A 30V N-Channel Enhancement Mode Power MOSFET DTG023N03L TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
34793. 120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...
34794. 200A 40V N-Channel Enhancement Mode Power MOSFET DSG014N04N TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
34795. 215A 85V N-Channel Enhancement Mode Power MOSFET DH025N08 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
34796. 115A 150V N-Channel Enhancement Mode Power MOSFET DSG092N15N3A TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
34797. 180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
34798. 50A 100V N-Channel Enhancement Mode Power MOSFET DSD190N10L3 [Jul 21, 2026]
[Jul 21, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
34799. 60A 100V N-Channel Enhancement Mode Power MOSFET DSG150N10L3 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
34800. 80A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
