Jiangsu Profile
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Product List
16. 50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 50 A Pulsed Collector Current ICM 150 A Diode ...
17. Standard Mount Diode Rectifier Mosfet Transistor Specifications by Powerpassion [Nov 26, 2025]
[Nov 26, 2025] Product Description Product Features Boasting a sophisticated single mesa structure (Single Mesa), this diode rectifier ensures optimal performance and reliability. Featuring a cutting-edge table glass passivation ...
18. High-Performance Diode Rectifier Mosfet Transistor for Power Applications [Nov 26, 2025]
[Nov 26, 2025] Product Description Product Features Featuring a Single Mesa Structure, this exceptional product ensures optimal performance and reliability. Crafted with a state-of-the-art Table Glass Passivation Process, ...
19. Versatile Mosfet Transistor for Standard Mount Diode Rectifier Applications [Nov 26, 2025]
[Nov 26, 2025] Product Description Exquisite Features of Our Product Ingeniously crafted with a Single Mesa structure that ensures unparalleled performance and efficiency. Expertly utilizes a Table Glass Passivation Process to ...
20. Durable Powerpassion Diode Rectifier Mosfet Transistor for Electronics [Nov 26, 2025]
[Nov 26, 2025] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
21. Standard Mount Diode Rectifier Mosfet Transistor by Powerpassion [Nov 26, 2025]
[Nov 26, 2025] Product Description Product features: Our advanced technology showcases remarkable features that set the standard in electronic components, ensuring superior performance and durability. Single mesa structure (Single ...
22. NPN Epitaxial Silicon Transistor Tip41c to-220 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A *Collector Current ...
23. Low Frequency Amplifier Shell Rated Bipolar NPN Transistor D882 to-126 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBD 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base Current(continuous) VEBO 5 V Collector current IC 3 A Collector pulse current (TP < ...
24. Hot Sale NPN Epitaxial Silicon Transistor Tip122 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 5 A *Collector Current ...
25. PLC Signal Amplifier Module Conversion Input Optocoupler Isolation Transistor Tigger Voltage 24V [Oct 16, 2025]
[Oct 16, 2025] Product Description Industrial 16/32 Channel MOSFET Relay Module – PLC Amplification Module MOSFET signal conversion module is a solid-state switching device based on metal oxide semiconductor field-effect transistor ...
26. 6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
27. 30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...
28. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...
29. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
30. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
