Jiangsu Profile

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Product List
3001. Gas Discharge Tube - SMD 3216 3.2*1.6*1.6 Series
[Oct 20, 2018]
[Oct 20, 2018] Circuit Protection GDTs offer a high level of surge protection, low capacitance and a broad array of breakover voltage levels, making them suitable for applications such as MDF (Main Distribution Frame) modules, high ...
3002. Gas Discharge Tube -3-Electrode 5*7.6 Series
[Oct 20, 2018]
[Oct 20, 2018] Circuit Protection GDTs offer a high level of surge protection, low capacitance and a broad array of breakover voltage levels, making them suitable for applications such as MDF (Main Distribution Frame) modules, high ...
3003. Gas Discharge Tube - 6.2*6.2*4.2 Series
[Oct 20, 2018]
[Oct 20, 2018] Circuit Protection GDTs offer a high level of surge protection, low capacitance and a broad array of breakover voltage levels, making them suitable for applications such as MDF (Main Distribution Frame) modules, high ...
3004. ISC Silicon NPN Power Transistor (2SC3320)
[Aug 09, 2014]
[Aug 09, 2014] Isc Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic ...
3005. Power Busbar with Heat Shrinkable Protective Casing
[Aug 21, 2024]
[Aug 21, 2024] Heat-shrinkable busbar protection sleeve for the 10-35KV transformer substation, power distribution cabinets and other occasions. TECHNICAL&USED Products using polyolefin blend made of composite materials, ...
3006. Transistor (Tip122)
[Aug 21, 2024]
[Aug 21, 2024] TO-220C package. Main parameter: HFE. High voltage capability, wide safety operating area. Comply with the requirement of RoHS Compliant Directive.
3007. Transistor (13005)
[Aug 21, 2024]
[Aug 21, 2024] High voltage capability, suitable switching speed, wide safety operating area, comply with the requirement of RoHS Compliant Directive. High quality and competitive price.
3008. Transistor (13007)
[Aug 21, 2024]
[Aug 21, 2024] Part No. 13007. TO-220 package. High voltage capability, suitable switching speed, wide safety operating area. Comply with the requirement of RoHS Compliant Directive. Excellent quality and competitive price.
3009. ISC Silicon PNP Power Transistor 2SB772
[Dec 11, 2015]
[Dec 11, 2015] DESCRIPTION High Collector Current -IC= -3A High Collector-Emitter Breakdown Voltage V(BR)CEO= -30V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD882 APPLICATIONS Designed for use in ...
3010. ISC Silicon PNP Power Transistor 2SA1757
[Nov 02, 2015]
[Nov 02, 2015] DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) High Switching Speed Low Saturation Voltage- VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) Wide Area of Safe Operation APPLICATIONS Designed ...
3011. ISC Silicon NPN Power Transistor (BU508A)
[Aug 09, 2014]
[Aug 09, 2014] Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Power Dissipation- : PD= 125W@TC= 25 APPLICATIONS Designed for use in large screen color deflection circuits.
3012. Quartz Glass Tube for Semiconductor
[Aug 21, 2024]
[Aug 21, 2024] PQ181s made by high purity quartz sand, made from inported sand or its own high purity quartz sand, maintains such characteristics as high purity, good surface, uniform dimension, low hydroxyl ion content, excellent ...
Company: Jiangsu Pacific Quartz Co., Ltd
3013. Transistor (Tip42)
[Aug 21, 2024]
[Aug 21, 2024] High voltage capability, wide safety operating area. Comply with the requirement of RoHS Compliant Directive.
3014. Reference Electrode
[Aug 21, 2024]
[Aug 21, 2024] Reference Electrode Series Reference electrode is an electrode which has a stable and well-known electrode potential. The high stability of the electrode potential is usually reached by employing a redox system with ...
3015. Power Transistor (TIP41C TIP42C 2SB834 2SD880)
[Nov 02, 2011]
[Nov 02, 2011] TIP41c- TRANSISTOR 1. Best price 2. RoHS 3. Sample offer 4. Excellent service TIP41c- TRANSISTOR 1> Fast delivery 2> Spot goods 3> Price: Depends on the market Supply full series transistor
Company: East Semiconductor Co.,Ltd













