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96% Alumina Al2O3 Ceramic Wafer Disc Substrate Insulator for Electronic Use
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4366.

96% Alumina Al2O3 Ceramic Wafer Disc Substrate Insulator for Electronic Use Open Details in New Window [Oct 28, 2026]

Product Description 96% Alumina Substrate 96% Alumina Substrate (also referred to as 96% Al2O3 Ceramic Substrate or 96% Alumina Ceramic Board) is a high-performance ceramic material widely used in electronics, power ...

Company: Lianyungang Highborn Technology Co., Ltd.

150W High Efficiency Rackmount RF Power Amplifier for RF Test Applications
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4367.

150W High Efficiency Rackmount RF Power Amplifier for RF Test Applications Open Details in New Window [Oct 26, 2026]

High Efficiency and Linearity 2-6GHz 150W 52dB Ultra-Wideband Rackmount Power Amplifier for test and measurement Product Description This ultra-wideband power amplifier chassis operates within the 2-6GHz frequency ...

Company: Nanjing Shinewave Technology Co., Ltd.

High-Performance 150W RF Power Amplifier for Testing and Calibration Needs
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4368.

High-Performance 150W RF Power Amplifier for Testing and Calibration Needs Open Details in New Window [Oct 26, 2026]

Customized High Power Output 2-6GHz 150W 52dB Ultra-Wideband Rackmount Power Amplifier for test and measurement Product Description This ultra-wideband power amplifier chassis operates within the 2-6GHz frequency ...

Company: Nanjing Shinewave Technology Co., Ltd.

2000-4000MHz 200W High Power RF Power Amplifier
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4369.

2000-4000MHz 200W High Power RF Power Amplifier Open Details in New Window [Oct 26, 2026]

Wide bandwidth characteristics 2000-4000 MHz 200W RF Power Amplifier for Scientific research Product Description The 2000-4000 MHz 200W RF Power Amplifier is a powerful rackmount device designed for standard 19-inch ...

Company: Nanjing Shinewave Technology Co., Ltd.

2-4GHz 200W High Efficiency RF Power Amplifier for Communication
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4370.

2-4GHz 200W High Efficiency RF Power Amplifier for Communication Open Details in New Window [Oct 26, 2026]

Linearity and High Power Output 2000-4000 MHz 200W RF Power Amplifier for Radar system and Wireless Communication Product Description The 2000-4000 MHz 200W RF Power Amplifier is a powerful rackmount device designed ...

Company: Nanjing Shinewave Technology Co., Ltd.

High-Performance 200W RF Amplifier for Enhanced Wireless Range
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4371.

High-Performance 200W RF Amplifier for Enhanced Wireless Range Open Details in New Window [Oct 26, 2026]

High power and high gain 2000-4000 MHz 200W RF Power Amplifier for Wireless Communication Product Description The 2000-4000 MHz 200W RF Power Amplifier is a powerful rackmount device designed for standard 19-inch ...

Company: Nanjing Shinewave Technology Co., Ltd.

19-Inch Rackmount 2000-4000MHz 200W RF Power Amplifier for Microwave Communication
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4372.

19-Inch Rackmount 2000-4000MHz 200W RF Power Amplifier for Microwave Communication Open Details in New Window [Oct 26, 2026]

Powerful rackmount device 19-inch 2000-4000 MHz 200W RF Power Amplifier for microwave communication Product Description The 2000-4000 MHz 200W RF Power Amplifier is a powerful rackmount device designed for standard ...

Company: Nanjing Shinewave Technology Co., Ltd.

9K-250MHz 500W Ultra Wideband RF Microwave Amplifier, High Reliability for Test & Measurement
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4373.

9K-250MHz 500W Ultra Wideband RF Microwave Amplifier, High Reliability for Test & Measurement Open Details in New Window [Oct 26, 2026]

High reliability and durability RF Microwave Amplifier 9K-250MHz 500W Ultra Wideband Power Amplifier for Testing and Measurement Product Description The 9KHz-250MHz Ultra Wideband Power Amplifier is a ...

Company: Nanjing Shinewave Technology Co., Ltd.

100A 1700V Half Bridge IGBT MODULE DGA100H170M2T 34MM
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4374.

100A 1700V Half Bridge IGBT MODULE DGA100H170M2T 34MM Open Details in New Window [Aug 13, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Innotion 100% New Vco 1700-2050MHz 8dBm High Output Power Voltage Controlled Oscillator for PCBA ...
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4375.

Innotion 100% New Vco 1700-2050MHz 8dBm High Output Power Voltage Controlled Oscillator for PCBA ... Open Details in New Window [Jul 16, 2026]

Product Description Product Description YSGM182008 is a high integration, standard package size VCO that uses high cutoff frequency RF transistors as oscillating transistors, with high output power and good isolation. ...

Company: Zhongshi Smart Technology (Suzhou) Co., Ltd.

Customize 8dBm 750-1030MHz Microwave Miniature Integrated Wideband RF Voltage Controlled Oscillator ...
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4376.

Customize 8dBm 750-1030MHz Microwave Miniature Integrated Wideband RF Voltage Controlled Oscillator ... Open Details in New Window [Jul 14, 2026]

Product Description Product Description YSGM081008 is a high integration, standard package size VCO that uses high cutoff frequency RF transistors as oscillating tubes, with high output power and good isolation. This ...

Company: Zhongshi Smart Technology (Suzhou) Co., Ltd.

Innotion 5V 7dBm 430-475MHz Voltage Controlled Oscillator of High Frequency Stability
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4377.

Innotion 5V 7dBm 430-475MHz Voltage Controlled Oscillator of High Frequency Stability Open Details in New Window [Jul 14, 2026]

Product Description Product Features Standard Frequency Range: 430-475MHz Pout: >7dBm(Typ) Supply Voltage(VCC): 5V Tune Voltage(VT): 0.5-2.7V 7mmx9mm SMT Package Low phase noise, low power consumption Non sealed, not ...

Company: Zhongshi Smart Technology (Suzhou) Co., Ltd.

Two Stage RF Signal Power Amplifier for Linearity 15dBm Input for 4.9-5.9g Linear
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4378.

Two Stage RF Signal Power Amplifier for Linearity 15dBm Input for 4.9-5.9g Linear Open Details in New Window [Jul 10, 2026]

Product Description Product Description The YP552228 is a 2-stage 4.9-5.9GHz high efficiency, high linearity power amplifier based on InGaP/GaAs HBT technology. The amplifier provides a typical gain of 22 dB and P1dB ...

Company: Zhongshi Smart Technology (Suzhou) Co., Ltd.

0.1-2GHz Ldmos 15W Power Amplifier for Wide-Band and Mobile Radio and Beidou Rdss System ...
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4379.

0.1-2GHz Ldmos 15W Power Amplifier for Wide-Band and Mobile Radio and Beidou Rdss System ... Open Details in New Window [Jul 10, 2026]

Product Description Product Description Innotion's YP161515T is a 15 watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio and Beidou RDSS System applications. It can be used in Class AB/B and Class C for ...

Company: Zhongshi Smart Technology (Suzhou) Co., Ltd.

Three Stage Solid State Power Amplifier RF Antenna Amplifier for 1.8-3.8g Wireless Signal
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4380.

Three Stage Solid State Power Amplifier RF Antenna Amplifier for 1.8-3.8g Wireless Signal Open Details in New Window [Jul 10, 2026]

Product Description Product Description Innotion's YP161515T is a 15 watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio and Beidou RDSS System applications. It can be used in Class AB/B and Class C for ...

Company: Zhongshi Smart Technology (Suzhou) Co., Ltd.