Jiangsu Profile
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Product List
151. X0405 600V 4A to-126 Thyristor 
[Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
152. Bt152 600V 13A to-252 Thyristor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
153. Mosfet 20V 30V 40V Sot-23 Sop-8 Dfn for Quick Charger Adapter Use RDS 2-20 [Mar 19, 2021]
[Mar 19, 2021] Product Description Mosfet 20v 30v 40v SOT-23 SOP-8 DFN for quick charger adapter use RDS 2-20 Part Number G3404 VDSS 30V ID 6A RDS 19 mΩ @ vgs=4.5V Vth 1.5V Package SOT-23 Ciss 485.8 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
154. G30n03A 30V 30A N Mosfet for Pd [Aug 19, 2022]
[Aug 19, 2022] Product Description G30N03A 30V 30A N Mosfet for Pd Part Number G30N03A VDSS 30V ID 30A RDS 9.2mΩ @ vgs=4.5V Vth 1.5V Package DFN3*3 Ciss 1490 pF Crss 135 pF Datasheet You may ...
Company: Wuxi Goford Semiconductor Co., Ltd.
155. Gt45n06 Goford Mosfet 60V 45A Dfn Package [Aug 19, 2022]
[Aug 19, 2022] Product Description Gt45n06 Goford Mosfet 60V 45A Dfn Package Part Number GT45N06 VDSS 60V ID 45A RDS 6.8mΩ @ vgs=10V Vth 1.7V Package DFN3*3 Ciss 1988 pF Crss 14 pF Datasheet You may ...
Company: Wuxi Goford Semiconductor Co., Ltd.
156. G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger [Aug 19, 2022]
[Aug 19, 2022] Product Description G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger Part Number G12P03A VDSS -30V ID -12A RDS 19 mΩ @ vgs=4.5V Vth -1.6V Package DFN3*3 Ciss 1800 pF Crss 216 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
157. Cr02A-8 400V 0.6A Sot23 Thyristor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
158. Gx1n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To92 Parts 600V 0.4A [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
159. Gx1n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To126 Parts 600V ... [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
160. Gx1n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To251 Parts 600V ... [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
161. Gx2n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To220 Parts 600V 2A [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
162. Gx4n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To220 Parts [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
163. 02n60SA High Quality Low Voltage N Channel Mosfet Transistor Original Component Sot23 Parts 60V 2A [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
164. 2310nsa High Quality Low Voltage N Channel Mosfet Transistor Original Component Sot23 Parts 60V 3A [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
165. 2324nsa High Quality Low Voltage N Channel Mosfet Transistor Original Component Sot23 Parts 100V 2A [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
