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High Quality Beam Pentode 6.3V Indirectly Heated a. F. Amplifier Electron Tube

3346.

High Quality Beam Pentode 6.3V Indirectly Heated a. F. Amplifier Electron Tube Open Details in New Window [May 06, 2019]

The KT88-T beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...

Company: Sinotronics Co., Ltd.

High Quality Bean Tetrode with an Absolute Maximum Anode Dissipation Electron Tube

3347.

High Quality Bean Tetrode with an Absolute Maximum Anode Dissipation Electron Tube Open Details in New Window [May 06, 2019]

The KT66 Beam tetrode is with an absolute maximum anode dissipation rating of 30w, it is designed for use in the output stage of an A. F. Amplifier, or as as series valve in a stabilized power supply heater voltage; ...

Company: Sinotronics Co., Ltd.

High Quality Beam Power Tube for Audio Frequency Power Electron Tube

3348.

High Quality Beam Power Tube for Audio Frequency Power Electron Tube Open Details in New Window [May 06, 2019]

The 5881 is a beam power tube for audio frequency power electron tube, Characteritics; Plate voltage; 400max grid-No. 2 (screen grid) voltage 400max heater for unipotential cathode voltage 6.3 ac or dc volts current; ...

Company: Sinotronics Co., Ltd.

High Quality Beam Pentode Electron Tube

3349.

High Quality Beam Pentode Electron Tube Open Details in New Window [May 06, 2019]

The KT88-98 Beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...

Company: Sinotronics Co., Ltd.

Supply High Quality SCR Transistor X0405 to-202

3350.

Supply High Quality SCR Transistor X0405 to-202 Open Details in New Window [Sep 09, 2016]

Product features and USES: 1) Advanced glass-passivation chip, small on-state voltage, high reliability 2) Widely used in the circuits, such as dimming, timing, motor-controlling, color lamp Controller, motor ...

Company: Nantong Mingxin Microelectronics Co., Ltd

NPN Transistors A44 Sot-23

3351.

NPN Transistors A44 Sot-23 Open Details in New Window [Jul 22, 2022]

Product Description Company Profile Kunshan Huateng Electronics Co., Ltd. was established in 2002, headquartered in Kunshan, Suzhou. Specializing in electronic components distribution and supporting services for ...

Company: Suzhou Tonghuiyang Electronics Co.; Ltd

Ceramic Power Tube (SL-35TG)

3352.

Ceramic Power Tube (SL-35TG) Open Details in New Window [Aug 22, 2024]

Nanjing Sanle Electronics Group Co., Ltd., is regarded as the cradle of China's Vacuum Electronic Industry. It's predecessor is the National Electric Research Laboratory established in 1935, and was expanded to the ...

Company: Nanjing Sanle Group Co., Ltd.

ISC Silicon NPN Power Transistor (2SC3320)

3353.

ISC Silicon NPN Power Transistor (2SC3320) Open Details in New Window [Aug 09, 2014]

Isc Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic ...

Company: Inchange Semiconductor Company Limited

ISC Silicon PNP Power Transistor 2SB772

3354.

ISC Silicon PNP Power Transistor 2SB772 Open Details in New Window [Dec 11, 2015]

DESCRIPTION High Collector Current -IC= -3A High Collector-Emitter Breakdown Voltage V(BR)CEO= -30V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD882 APPLICATIONS Designed for use in ...

Company: Inchange Semiconductor Company Limited

ISC Silicon PNP Power Transistor 2SA1757

3355.

ISC Silicon PNP Power Transistor 2SA1757 Open Details in New Window [Nov 02, 2015]

DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) High Switching Speed Low Saturation Voltage- VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) Wide Area of Safe Operation APPLICATIONS Designed ...

Company: Inchange Semiconductor Company Limited

ISC Silicon NPN Power Transistor (BU508A)

3356.

ISC Silicon NPN Power Transistor (BU508A) Open Details in New Window [Aug 09, 2014]

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Power Dissipation- : PD= 125W@TC= 25 APPLICATIONS Designed for use in large screen color deflection circuits.

Company: Inchange Semiconductor Company Limited

Launch Tube (E3062C)

3357.

Launch Tube (E3062C) Open Details in New Window [Aug 22, 2024]

Technical Parameter Part Number: E3062C Filament Voltage: 6.3V Filament Current: 32.5A Amplification Factor: 25 Frequency: 50 MHz Anode Voltage: 7 kV Anode Current: 700 mA Output Power: 4200 W Cooling Method: ...

Company: Nanjing Sanle Group Co., Ltd.

Power Tube 813

3358.

Power Tube 813 Open Details in New Window [Aug 22, 2024]

Nanjing Sanle Electronics Group Co., Ltd. is publicly regarded as the cradle of China's Vacuum Electronic Industry. It's predecessor is the National Electric Research Laboratory established in 1935 and expanded to the ...

Company: Nanjing Sanle Group Co., Ltd.

Counter Tube

3359.

Counter Tube Open Details in New Window [Aug 22, 2024]

Nanjing Sanle Electronics Group Co., Ltd. is publicly regarded as the cradle of China's Vacuum Electronic Industry. It's predecessor is the National Electric Research Laboratory established in 1935 and expanded to the ...

Company: Nanjing Sanle Group Co., Ltd.

Electron Tube (7T69RB)

3360.

Electron Tube (7T69RB) Open Details in New Window [Jun 16, 2016]

Triode, Power Tube, Electron Tube 7T69RB Cathod type: TH-W Filament voltage: 12.6 V Filament current: 35A Max Height: 240mm Max diamter: 127mm Output power: 8000 W Anode filament: 8000 V Anode current: 2 ...

Company: High Hope Int'l Inc.