Jiangsu Profile
Product List
3346. High Quality Beam Pentode 6.3V Indirectly Hated The Gekt 88 Electron Tube 
[May 06, 2019]
[May 06, 2019] GEKT 88 beam pentode 6.3v indirectly heated it has an anode dissipation of 35w and is primarily designed for the output stage of an a. F. Amplifier for which two valves will provide up to 100 w out put. Under ...
Company: Sinotronics Co., Ltd.
3347. High Quality Beam Pentode 6.3V Indirectly Heated a. F. Amplifier Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-T beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
3348. High Quality Bean Tetrode with an Absolute Maximum Anode Dissipation Electron Tube [May 06, 2019]
[May 06, 2019] The KT66 Beam tetrode is with an absolute maximum anode dissipation rating of 30w, it is designed for use in the output stage of an A. F. Amplifier, or as as series valve in a stabilized power supply heater voltage; ...
Company: Sinotronics Co., Ltd.
3349. High Quality Beam Power Tube for Audio Frequency Power Electron Tube [May 06, 2019]
[May 06, 2019] The 5881 is a beam power tube for audio frequency power electron tube, Characteritics; Plate voltage; 400max grid-No. 2 (screen grid) voltage 400max heater for unipotential cathode voltage 6.3 ac or dc volts current; ...
Company: Sinotronics Co., Ltd.
3350. High Quality Beam Pentode Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-98 Beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
3351. NPN Transistors A44 Sot-23 [Jul 22, 2022]
[Jul 22, 2022] Product Description Company Profile Kunshan Huateng Electronics Co., Ltd. was established in 2002, headquartered in Kunshan, Suzhou. Specializing in electronic components distribution and supporting services for ...
3352. Supply High Quality SCR Transistor X0405 to-202 [Sep 09, 2016]
[Sep 09, 2016] Product features and USES: 1) Advanced glass-passivation chip, small on-state voltage, high reliability 2) Widely used in the circuits, such as dimming, timing, motor-controlling, color lamp Controller, motor ...
3353. PCB Transistor Gt12n06s 60V 12A Mosfet for LED Lighting and Dimming [Jun 10, 2022]
[Jun 10, 2022] Product Description PCB Transistor GT12N06S 60V 12A Mosfet for LED Lighting and Dimming Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3354. Gt12n06s 60V 12A Mosfet Transistor for Motor Control [Jun 14, 2022]
[Jun 14, 2022] Product Description GT12N06S 60V 12A mosfet transistor for motor control Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip size and better ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3355. Ceramic Power Tube (SL-35TG) [Aug 22, 2024]
[Aug 22, 2024] Nanjing Sanle Electronics Group Co., Ltd., is regarded as the cradle of China's Vacuum Electronic Industry. It's predecessor is the National Electric Research Laboratory established in 1935, and was expanded to the ...
Company: Nanjing Sanle Group Co., Ltd.
3356. Factory Directly Gt12n06s 60V 12A Mosfet Transistor for Motor Control [Aug 19, 2022]
[Aug 19, 2022] Product Description Factory Directly GT12N06S 60V 12A mosfet transistor for motor control Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3357. ISC Silicon NPN Power Transistor (2SC3320) [Aug 09, 2014]
[Aug 09, 2014] Isc Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic ...
3358. ISC Silicon PNP Power Transistor 2SB772 [Dec 11, 2015]
[Dec 11, 2015] DESCRIPTION High Collector Current -IC= -3A High Collector-Emitter Breakdown Voltage V(BR)CEO= -30V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD882 APPLICATIONS Designed for use in ...
3359. ISC Silicon PNP Power Transistor 2SA1757 [Nov 02, 2015]
[Nov 02, 2015] DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) High Switching Speed Low Saturation Voltage- VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) Wide Area of Safe Operation APPLICATIONS Designed ...
3360. ISC Silicon NPN Power Transistor (BU508A) [Aug 09, 2014]
[Aug 09, 2014] Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Power Dissipation- : PD= 125W@TC= 25 APPLICATIONS Designed for use in large screen color deflection circuits.
