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30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C
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3976.

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 1200V SiC Schottky Barrier Diode DCD05D120G3 TO-252
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3977.

5A 1200V SiC Schottky Barrier Diode DCD05D120G3 TO-252 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 150V Schottky Barrier Diode MBR20R150CT TO-220
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3978.

20A 150V Schottky Barrier Diode MBR20R150CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 60V Schottky Barrier Diode MBR1060CT TO-220
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3979.

10A 60V Schottky Barrier Diode MBR1060CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V SiC Schottky Barrier Diode DCD10D65G4 TO-252
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3980.

10A 650V SiC Schottky Barrier Diode DCD10D65G4 TO-252 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 45V Schottky Barrier Diode MBRF1045CT TO-220F
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3981.

10A 45V Schottky Barrier Diode MBRF1045CT TO-220F Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Schottky Barrier Diode MBR20R100CT TO-220
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3982.

20A 100V Schottky Barrier Diode MBR20R100CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252
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3983.

10A 1200V SiC Schottky Barrier Diode DCD10D120G4 TO-252 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 45V Schottky Barrier Diode MBR4045CT TO-263
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3984.

40A 45V Schottky Barrier Diode MBR4045CT TO-263 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V Schottky Barrier Diode MBR40100CT TO-220
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3985.

40A 100V Schottky Barrier Diode MBR40100CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 150V Schottky Barrier Diode MBR30150CT TO-220
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3986.

30A 150V Schottky Barrier Diode MBR30150CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Schottky Barrier Diode MBR30R45CTS TO-220C
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3987.

30A 45V Schottky Barrier Diode MBR30R45CTS TO-220C Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Schottky Barrier Diode MBR10R100CT TO-220
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3988.

10A 100V Schottky Barrier Diode MBR10R100CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 150V Schottky Barrier Diode MBR10R150CT TO-252
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3989.

10A 150V Schottky Barrier Diode MBR10R150CT TO-252 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.78 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Schottky Barrier Diode MBR2060CT TO-220
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3990.

20A 60V Schottky Barrier Diode MBR2060CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd