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30A 60V Schottky Barrier Diode MBR3060CT TO-220M
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4051.

30A 60V Schottky Barrier Diode MBR3060CT TO-220M Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Schottky Barrier Diode MBR10100CT TO-220M
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4052.

10A 100V Schottky Barrier Diode MBR10100CT TO-220M Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCC20D65G4 TO-247
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4053.

20A 650V SiC Schottky Barrier Diode DCC20D65G4 TO-247 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 60V Schottky Barrier Diode MBR40R60CT TO-220C
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4054.

40A 60V Schottky Barrier Diode MBR40R60CT TO-220C Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Schottky Barrier Diode MBR3045CT TO-263
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4055.

30A 45V Schottky Barrier Diode MBR3045CT TO-263 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 100V Schottky Barrier Diode MBR16100CT TO-220
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4056.

16A 100V Schottky Barrier Diode MBR16100CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 200V Schottky Barrier Diode MBRF20200CT TO-220F
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4057.

20A 200V Schottky Barrier Diode MBRF20200CT TO-220F Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Schottky Barrier Diode MBR20100CS
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4058.

20A 100V Schottky Barrier Diode MBR20100CS Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCCT20D65G4 TO-247
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4059.

20A 650V SiC Schottky Barrier Diode DCCT20D65G4 TO-247 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 80V Schottky Barrier Diode MBR20R80CT TO-220
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4060.

20A 80V Schottky Barrier Diode MBR20R80CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 80 typ.90 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.58 max 0.7 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode MBR30R100CT TO-220
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4061.

30A 100V Schottky Barrier Diode MBR30R100CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 45V Schottky Barrier Diode MBR20R45CT TO-220C
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4062.

20A 45V Schottky Barrier Diode MBR20R45CT TO-220C Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode MBRD30100CT TO-252B
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4063.

30A 100V Schottky Barrier Diode MBRD30100CT TO-252B Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V SiC Schottky Barrier Diode DCC40D65G4 TO-247
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4064.

40A 650V SiC Schottky Barrier Diode DCC40D65G4 TO-247 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 1200V SiC Schottky Barrier Diode DCC20D120G4 TO-247
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4065.

20A 1200V SiC Schottky Barrier Diode DCC20D120G4 TO-247 Open Details in New Window [Jul 21, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd