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Swg32 Copper Covered Aluminum Magnesium Wire/CCAM Wire for Electrical Wire
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22771.

Swg32 Copper Covered Aluminum Magnesium Wire/CCAM Wire for Electrical Wire Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

China SGS Certificated Copper Clad Aluminum Wire for Superfine Coaxial Cable Inner Conductor
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22772.

China SGS Certificated Copper Clad Aluminum Wire for Superfine Coaxial Cable Inner Conductor Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire(CCA wire) Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

CCA Wire for Electrical and Cables
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22773.

CCA Wire for Electrical and Cables Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

China Small Diameter Copper Clad Steel Wire/CCS Wire Used for Braided Shield Wire
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22774.

China Small Diameter Copper Clad Steel Wire/CCS Wire Used for Braided Shield Wire Open Details in New Window [Jun 27, 2025]

Copper clad steel wire (CCS wire) Specification : 0.08mm-2.5mm CCS wire use the cladding or plating craft to make copper around the steel coil to create atom bonds between the two metals , it can be process like ...

Company: Changzhou Capa New Materials Co., Ltd.

China High Quality CCA Wire for RF Shielded   Cable Network
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22775.

China High Quality CCA Wire for RF Shielded   Cable Network Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire(CCA wire) Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

2020 Wholesale with ISO Certificated Copper Coated Aluminum Wire
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22776.

2020 Wholesale with ISO Certificated Copper Coated Aluminum Wire Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire(CCA wire) Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

China High Quality Tinned CCA Wire for Shielding Copper Braided Cover
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22777.

China High Quality Tinned CCA Wire for Shielding Copper Braided Cover Open Details in New Window [Jun 27, 2025]

Tinned Copper clad aluminum wire (TCCA wire) Diameter Specification : 0.12mm--0.80mm Tinned CCA wire is a new shielding materials which made of CCA inner conductor and Tin layer , the electric property and ...

Company: Changzhou Capa New Materials Co., Ltd.

80A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06p Dfn5X6
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22778.

80A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06p Dfn5X6 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10u Toll Package
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22779.

180A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10u Toll Package Open Details in New Window [Jun 25, 2025]

Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 180 A ID(TC=100ºC) 115 A Pulsed Drain Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6
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22780.

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6
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22781.

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6
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22782.

108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6
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22783.

96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na
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22784.

300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DSU021N10NA Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 210 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6
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22785.

50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -40 V ID (T=25ºC) - -50 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 75 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd