Jiangsu Profile
Product List
22786. 108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6 
[Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...
22787. 96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
22788. 300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DSU021N10NA Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 210 A Drain ...
22789. 50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS -40 V ID (T=25ºC) - -50 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 75 W Features Fast Switching Low ON ...
22790. 112A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 78 A Drain ...
22791. 47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
22792. 176A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07p Dfn5X6-8L [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 176 A (T=100ºC) 123 A Drain ...
22793. 64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...
22794. 108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...
22795. 117A 70V N-Channel Enhancement Mode Power Mosfet Dhs043n07p [Jun 23, 2025]
[Jun 23, 2025] Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Synchronous rectification in SMPS Hard ...
22796. 54A 30V N-Channel Enhancement Mode Power Mosfet Dh060n03r [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 54 A (T=100ºC) 35 A Drain ...
22797. 240A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88u [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 240 A (T=100ºC) 170 A Drain ...
22798. Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
22799. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lb to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS180N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
22800. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
