Jiangsu Profile
Product List
87166. 180A 68V N-Channel Enhancement Mode Power MOSFET DHS026N06E TO-263 
[Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
87167. 60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
87168. 70A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
87169. 60A 60V P-Channel Enhancement Mode Power MOSFET DH150P06D TO-252 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 110 W Rdson 14 - 720 mΩ ...
87170. 20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20B TO-251 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
87171. 140A 90V N-Channel Enhancement Mode Power MOSFET DH140N09 TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 97 V ID (T=25ºC) - - 140 A BVGSS ±20 V VTH 2 4 V EAS - - 1080 mJ Ptot - - 250 W Rdson 6.5 - 7.5 mΩ ...
87172. 180A 85V N-Channel Enhancement Mode Power MOSFET DHS020N85 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N85/DHS020N85E DHS020N85D/DHS020N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
87173. 150A 80V N-Channel Enhancement Mode Power MOSFET E150N08 TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 150N08/I150N08/E150N08 F150N08 Maximum Drian-Source DC Voltage VDS 80 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
87174. 80A 80V N-Channel Enhancement Mode Power MOSFET DHD80N08 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
87175. 20A 60V Schottky Barrier Diode MBR2060CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
87176. 8A 400V Fast Recovery Diode MUR840 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
87177. 61A 60V N-Channel Enhancement Mode Power MOSFET DH16N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N06 DHF16N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
87178. 20A 200V Schottky Barrier Diode MBR20200CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
87179. 100A 60V N-Channel Enhancement Mode Power MOSFET DH065N06D TO-252 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
87180. 80A 60V N-Channel Enhancement Mode Power MOSFET E80N06 TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
