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150A 80V N-Channel Enhancement Mode Power MOSFET E150N08 TO-263
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87226.

150A 80V N-Channel Enhancement Mode Power MOSFET E150N08 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 150N08/I150N08/E150N08 F150N08 Maximum Drian-Source DC Voltage VDS 80 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 80V N-Channel Enhancement Mode Power MOSFET DHD80N08 TO-252
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87227.

80A 80V N-Channel Enhancement Mode Power MOSFET DHD80N08 TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Schottky Barrier Diode MBR2060CT TO-220
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87228.

20A 60V Schottky Barrier Diode MBR2060CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 400V Fast Recovery Diode MUR840 TO-220
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87229.

8A 400V Fast Recovery Diode MUR840 TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

61A 60V N-Channel Enhancement Mode Power MOSFET DH16N06 TO-220
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87230.

61A 60V N-Channel Enhancement Mode Power MOSFET DH16N06 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N06 DHF16N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 200V Schottky Barrier Diode MBR20200CT TO-220
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87231.

20A 200V Schottky Barrier Diode MBR20200CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 60V N-Channel Enhancement Mode Power MOSFET DH065N06D TO-252
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87232.

100A 60V N-Channel Enhancement Mode Power MOSFET DH065N06D TO-252 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET E80N06 TO-263
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87233.

80A 60V N-Channel Enhancement Mode Power MOSFET E80N06 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power MOSFET 180N06 TO-247
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87234.

180A 60V N-Channel Enhancement Mode Power MOSFET 180N06 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 130 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 200V Schottky Barrier Diode HMBR30200CT TO-220
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87235.

30A 200V Schottky Barrier Diode HMBR30200CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical applications are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

115A 100V N-Channel Enhancement Mode Power MOSFET D100N10 TO-220
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87236.

115A 100V N-Channel Enhancement Mode Power MOSFET D100N10 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT D100N10/ID100N10/ED100N10 FD100N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 300V Fast Recovery Diode MUR80FU30CT TO-247
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87237.

80A 300V Fast Recovery Diode MUR80FU30CT TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss high efficiency Low forward voltage high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

210A 30V N-Channel Enhancement Mode Power MOSFET DH020N03D TO-252
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87238.

210A 30V N-Channel Enhancement Mode Power MOSFET DH020N03D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH020N03/ Units DHI020N03/DHE020N03/DHB020N03/DHD020N03 DHF020N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

54A 30V P-Channel Enhancement Mode Power MOSFET DH130P03D TO-252
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87239.

54A 30V P-Channel Enhancement Mode Power MOSFET DH130P03D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH130P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -54 A (T=100ºC) -38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power MOSFET DHD10N65 TO-252
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87240.

10A 650V N-Channel Enhancement Mode Power MOSFET DHD10N65 TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd