Jiangsu Profile
Product List
2716. Bav199 5-Inch Fast Switching Diode Chips/Silicon Wafer 
[Dec 09, 2020]
[Dec 09, 2020] Die Size 0.28mm×0.28mm IF 160mA VR 75V VF/VF1 0.9/1.25V IR 5μA CT 2pF trr 3000ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...
2717. Bj162 4-Inch Diode Wafer Bj162 Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1620μ m×1620μ m Known Good Dies 2800 P(W) 35 I(A) 3.2 BCEO/BCEO/BEBO(V) 220/350/7 hFE 10-40 fT(MHz) 5 Metallization Front: Al Back: Ag Yangzhou Genesis Microelectronics Co., ...
2718. Es1j SMD Super Fast Recovery Rectifier Diode 1A 600V Surface Mount [Jan 11, 2025]
[Jan 11, 2025] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with ...
2719. Es2j Diode Rectifier 2A 600V SMD Super Fast Recovery Rectifier Diode Semiconductor [Jan 11, 2025]
[Jan 11, 2025] ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
2720. Diode Laser Module [Dec 29, 2022]
[Dec 29, 2022] High output High optical-optical conversion Efficiency Reliable sealing Long life time over 10000 hours Compact Low prices
2721. Bridge Rectifier Diode MB10f (MB10S/MB6S/ABS10/GBU808/KBP208G) [Feb 24, 2018]
[Feb 24, 2018] VRRM: 50V-1000V VRMS: 35V-700V IF: 0.5A-1A IFSM: 30A VF: 1V(MAX) IR: 5uA(MAX, TA=25º C) CJ: 13pF TJ/TSTG: -55-150º C
2722. Free Samples 1W 5.6V Do-41 Plastic Package Zener Diode Original [Apr 30, 2019]
[Apr 30, 2019] (1) Good quatliy (2) Competitve price (3) Quick lead time (4) Awesome service FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0, halogen-free Metal silicon junction ...
2723. High Voltage Diode Quality Like Sanken and Hitachi Diode [Feb 24, 2018]
[Feb 24, 2018] If: 5mA, Vr: 13KV, Trr: 80nS, Body Size: 2.5*10mm, 3*10mm High voltage power supply application
2724. Microwave Ovens SMD High Voltage Diode Cl01-09/Cl01-12/Cl04-12/Cl08-08/Hvm12/T3512 [Feb 24, 2018]
[Feb 24, 2018] Our high voltage diodes are widely used in laser printers, automotive ignition coil, laser cutting equipment, negative ion generators, high voltage power supply, microwave ovens, etc. CL01-12 parameter ...
2725. High Voltage Diode 2cl703/2cl704/2cl71A/2cl3a/2cl75A/2cl77/Cl01-12/Cl08-08/Cl04-12/Cl03-15/Cl05-04 [Feb 24, 2018]
[Feb 24, 2018] VRRM: 12KV IF(AV): 350mA IFSM: 30A TJ: 130º C Tstg: -40-120º C IR: 5uA(MAX Ta=25º C)
2726. Microwave Ovens Application Diode Cl01-12/Cl04-12/Hvm12/T3512 [Feb 24, 2018]
[Feb 24, 2018] VRRM: 12KV IF(AV): 350mA IFSM: 30A Tj: 130º C Tstg: -40-120º C VFM: 12V(MAX, IFM=350mA, Ta=25º C) IR: 5uA(MAX, Ta=25º C) Body Case: 7.5*22mm
2727. N-channel Enhancement Mode Power MOSFET 2312A SOT-23 [Dec 13, 2022]
[Dec 13, 2022] Product Description Features 20V, 6.8A RDS(ON)< 21mΩ @ VGS =4.5V RDS(ON)< 30mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
2728. N-channel Enhancement Mode Power MOSFET JMTL3416KS SOT-23 [Dec 08, 2022]
[Dec 08, 2022] Product Description Features 20V, 5A RDS(ON)< 22mΩ @ VGS =4.5V RDS(ON)< 36mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ESD ...
2729. Dual N-channel Enhancement Mode Power MOSFET JMTM8205A SOT23-6L [Dec 07, 2022]
[Dec 07, 2022] Product Description Features 20V, 5A RDS(ON)<26mΩ @ VGS =4.5V RDS(ON)<34mΩ @ VGS =2.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
2730. Dual N-channel Enhancement Mode Power MOSFET JMTM3406D SOT-23-6L [Dec 05, 2022]
[Dec 05, 2022] Product Description Features 30V, 3.8A RDS(ON)<38mΩ @ VGS =10V RDS(ON)<65mΩ @ VGS =4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is ...
