Jiangsu Profile
Product List
2746. S45n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer 
[Dec 10, 2020]
[Dec 10, 2020] Die Size 1.14mm×1.14mm IF 2A VR 20V IR 100μA VF 0.46V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2747. S40p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.016mm×1.016mm IF 2A VR 40V IR 50μA VF 0.54V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2748. S40p60byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.016mm×1.016mm IF 2A VR 60V IR 25μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2749. S28n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1A VR 20V IR 100μA VF 0.45V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2750. S26n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.66mm×0.66mm IF 1A VR 40V IR 100μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2751. S24n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 0.75A VR 40V IR 1000μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2752. S28n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1A VR 60V IR 100μA VF 0.66V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2753. Bav199 5-Inch Fast Switching Diode Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.28mm×0.28mm IF 160mA VR 75V VF/VF1 0.9/1.25V IR 5μA CT 2pF trr 3000ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...
2754. Bj162 4-Inch Diode Wafer Bj162 Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1620μ m×1620μ m Known Good Dies 2800 P(W) 35 I(A) 3.2 BCEO/BCEO/BEBO(V) 220/350/7 hFE 10-40 fT(MHz) 5 Metallization Front: Al Back: Ag Yangzhou Genesis Microelectronics Co., ...
2755. Es1j SMD Super Fast Recovery Rectifier Diode 1A 600V Surface Mount [Jan 11, 2025]
[Jan 11, 2025] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with ...
2756. Es2j Diode Rectifier 2A 600V SMD Super Fast Recovery Rectifier Diode Semiconductor [Jan 11, 2025]
[Jan 11, 2025] ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
2758. Diode Laser Module [Dec 29, 2022]
[Dec 29, 2022] High output High optical-optical conversion Efficiency Reliable sealing Long life time over 10000 hours Compact Low prices
2759. Bridge Rectifier Diode MB10f (MB10S/MB6S/ABS10/GBU808/KBP208G) [Feb 24, 2018]
[Feb 24, 2018] VRRM: 50V-1000V VRMS: 35V-700V IF: 0.5A-1A IFSM: 30A VF: 1V(MAX) IR: 5uA(MAX, TA=25º C) CJ: 13pF TJ/TSTG: -55-150º C
2760. Free Samples 1W 5.6V Do-41 Plastic Package Zener Diode Original [Apr 30, 2019]
[Apr 30, 2019] (1) Good quatliy (2) Competitve price (3) Quick lead time (4) Awesome service FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0, halogen-free Metal silicon junction ...
