Jiangsu Profile
Product List
2746. IC Power Transistor Sic Mosfet G33n03D3 30V 33A for USB Charger 
[Mar 19, 2021]
[Mar 19, 2021] Product Description ic power transistor sic mosfet G33N03D3 30V 33A for usb charger Part Number G33N03D3 VDSS 30V ID 33A RDS 11mΩ @ vgs=4.5V Vth 0.66V Package DFN3.3*3.3 Ciss 938 pF Crss 99 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2747. G40n03A 30V 40A Transistor Mosfet for Digital Products [Mar 19, 2021]
[Mar 19, 2021] Product Description G40N03A 30V 40A transistor mosfet for digital products Part Number G40N03A VDSS 30V ID 40A RDS 8.2mΩ @ vgs=4.5V Vth 1.5V Package DFN3*3 Ciss 1560 pF Crss 155 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2748. SMD Components Small Signal Mosfet G30n04D3 40V 30A Dfn3*3 [Mar 19, 2021]
[Mar 19, 2021] Product Description Smd components small signal mosfet G30N04D3 40V 30A DFN3*3 Part Number G30N04D3 VDSS 40V ID 30A RDS 11.3mΩ @ vgs=4.5V Vth 1.32V Package DFN3*3 Ciss 1780 pF Crss 160 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2749. Wholesale of New Original IGBT Modules Skm100GB12t4 Skm100GB125DN [Mar 28, 2025]
[Mar 28, 2025] SKM100GB12T4 1000 MODULE 24+ SKM100GB125DN 1000 MODULE 24+ SKKD100/12 1000 MODULE 24+ SKM100GB123D 1000 MODULE 24+ SKM300GB12T4 1000 MODULE 24+ SKM150GB17E4 1000 MODULE 24+ ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
2750. Fqd12p10 Euivalent Transistor Mosfet of 100V 12A Dpak Package [Jun 20, 2022]
[Jun 20, 2022] FQD12P10 Euivalent Transistor MOSFET of 100V 12A DPAK Package General Description The G12P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2751. ISO9001 Certificate Factory Mosfet of 100V 120A to-220 Package [Jun 14, 2022]
[Jun 14, 2022] ISO9001 Certificate Factory Mosfet of 100V 120A TO-220 Package General Description The GT100N12T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2752. Electronic Parts Semiconductor Equivalent Transistor of 100V Dpak Mosfet [Jun 10, 2022]
[Jun 10, 2022] Electronic Parts Semiconductor Equivalent Transistor of 100V DPAK Mosfet General Description The G06N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2753. Irf640fp Replacement 200V 18A to-220f Mosfet Transistor for UPS [Jun 10, 2022]
[Jun 10, 2022] IRF640FP Replacement 200V 18A TO-220F MOSFET Transistor for UPS General Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2754. Free Sample Mosfet 100V 10A to-252 for LED Lighting Application [Jun 10, 2022]
[Jun 10, 2022] Free Sample MOSFET 100V 10A TO-252 for LED Lighting Application General Description The G10N10A-252 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2755. New Original Transistor 20n06 60V 20A N-Channnel to-252 Mosfet for Motor Control [May 27, 2022]
[May 27, 2022] New Original Transistor 20N06 60V 20A N-Channnel TO-252 Mosfet for Motor Control General Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2756. Original Power Mosfet Aod4286 Replacement G15n10c 100V 15A Mosfet with to-252 Package [May 27, 2022]
[May 27, 2022] Original Power MOSFET AOD4286 Replacement G15N10C 100V 15A MOSFET with TO-252 Package General Description The G15N10C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2757. Mosfet Ao3438 Substitute 20V 6A N-Channel Mosfet with Sot-23 Package [May 27, 2022]
[May 27, 2022] MOSFET AO3438 Substitute 20V 6A N-channel Mosfet with SOT-23 Package General Description The 2300F uses advanced trench technology to achieve extremely low on-resistance. And fast switching speed and improved ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2758. Equivalent Transistor Fqd10n20L Substitute Mosfet of 200V 9A Dpak [May 21, 2022]
[May 21, 2022] Equivalent Transistor FQD10N20L Substitute MOSFET of 200V 9A DPAK General Description The 630A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2759. Electronic Component 30V 40A G40n03A Transistor Mosfetwith RoHS [Mar 18, 2022]
[Mar 18, 2022] Electronic Component 30V 40A G40N03A Transistor MOSFETwith ROHS General Description The G40N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2760. Original Package Electronic Components Gt55n06 60V 53A Power Transistor Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description Original Package Electronic Components Gt55n06 60V 53A Power Transistor Mosfet Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
