Jiangsu Profile
Product List
3946. Components Electronic IC Transistor G1006le 100V 3A Mosfet Professional Manufacturer 
[Aug 19, 2022]
[Aug 19, 2022] Product Description Components electronic ic transistor G1006LE 100V 3A mosfet professional manufacturer Part Number G1006LE VDSS 100V ID 3A RDS 143mΩ @ vgs=10V Vth 1.7V Package SOT-23-3 Ciss 622 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3947. G1003A 100V 3A Hot Offer SMD Mosfet Transistor as a Switch Electronics Stocks [Aug 19, 2022]
[Aug 19, 2022] Product Description G1003A 100V 3A Hot offer smd mosfet transistor as a switch electronics stocks Part Number G1003A VDSS 100V ID 3A RDS 147mΩ @ vgs=10V Vth 1.5V Package SOT-23-3 Ciss 622 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3948. G1003A 100V 3A Trench Mosfet for Power Conversion and Switching Circuits [Aug 19, 2022]
[Aug 19, 2022] Product Description G1003A 100V 3A trench mosfet for power conversion and switching circuits Part Number G1003A VDSS 100V ID 3A RDS 147mΩ @ vgs=10V Vth 1.5V Package SOT-23-3 Ciss 622 pF Crss 24 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3949. Dual N Channel G1008b 100V 8A Transistor Mosfet for LED Lighting Power Supply [Aug 19, 2022]
[Aug 19, 2022] Product Description Dual N channel G1008B 100V 8A Transistor mosfet for led lighting power supply Part Number G1008B VDSS 100V ID 8A RDS 102mΩ @ vgs=10V Vth 1.8V Package SOP-8 Ciss 690 pF Crss 90 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3950. Enhancement Mode Field Effect Transistor 20n06 60V 25A Mosfet Switching Applications [Aug 19, 2022]
[Aug 19, 2022] Product Description Enhancement Mode Field Effect Transistor 20N06 60V 25A mosfet switching applications Part Number 20N06 VDSS 60V ID 25A RDS 18mΩ @ vgs=10V Vth 1~3V Package TO-252 Ciss 1890 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3951. Irf100b202 Equivalent Transistor 100V 75A to-220 Package Mosfet [Aug 19, 2022]
[Aug 19, 2022] IRF100B202 Equivalent Transistor 100V 75A TO-220 Package Mosfet General Description The GT080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3952. STP20NF06L Replacement 20n06 to-220 N-CH 60V Mosfet for Motor [Jun 10, 2022]
[Jun 10, 2022] STP20NF06L Replacement 20N06 TO-220 N-Ch 60V MOSFET for Motor General Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3953. Zp1500 400-1400V Zp Series Standard Diode SCR Thyristor [Aug 20, 2024]
[Aug 20, 2024] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
3954. Zp1100 1400-2000V Zp Series Standard Diode SCR Thyristor [Aug 20, 2024]
[Aug 20, 2024] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
3955. Zp900 2000-2600V Zp Series Standard Diode SCR Thyristor [Aug 20, 2024]
[Aug 20, 2024] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
3956. Zp800 2600-3400V Zp Series Standard Diode SCR Thyristor [Aug 20, 2024]
[Aug 20, 2024] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
3957. Zp600 3600-4500V Zp Series Standard Diode SCR Thyristor [Aug 20, 2024]
[Aug 20, 2024] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
3958. Bat54 5-Inch Small-Signal Schottky Diode Chips/Wafer [Aug 20, 2024]
[Aug 20, 2024] Die Size 0.35mm×0.35mm IF 200mA VR 30V VF/VF1 0.23/1V IR 2μA CT 10pF trr 5 ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which ...
3959. 1n4148ss 4-Inch Silver Bump Switching Diode Chips/Wafer [Aug 20, 2024]
[Aug 20, 2024] Die Size 0.21mm×0.21mm IF 200mA VR 100V VF/VF1 1/0.7V IR1/IR2 25/100nA CT 3pF trr 4ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...
3960. Zp2400 600-1400V Zp Series Standard Diode SCR Thyristor [Aug 20, 2024]
[Aug 20, 2024] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
