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Irf100b202 Alternative N Channel 100V 75A to-220 Package Mosfet

3871.

Irf100b202 Alternative N Channel 100V 75A to-220 Package Mosfet Open Details in New Window [May 24, 2022]

IRF100B202 Alternative N Channel 100V 75A TO-220 Package Mosfet General Description The GT080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Pb Free RoHS SGS Certified 60V Vds P-Channel to-252 Dpak Trench Mosfet G25p06 with ISO

3872.

Pb Free RoHS SGS Certified 60V Vds P-Channel to-252 Dpak Trench Mosfet G25p06 with ISO Open Details in New Window [Nov 17, 2021]

Product Description Pb free Rohs SGS certified 60V VDS P-Channel To-252 Dpak Trench Mosfet G25P06 Part Number G65P06K VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-252 Ciss 5814 ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Converter Application Low Gate Charge Fet Transistor So-8 Mosfet P-CH 40V Vdss G07p04s with RoHS ISO

3873.

Converter Application Low Gate Charge Fet Transistor So-8 Mosfet P-CH 40V Vdss G07p04s with RoHS ISO Open Details in New Window [Nov 17, 2021]

Product Description Converter application low gate charge FET Transistor SO-8 Mosfet P-CH 40V VDSS G07P04S Part Number G07P04S VDSS -40V ID -7A RDS 18mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Single P-CH G6p06 with Package Sop-8 Power Transistor Electronic Components Mosfet with RoHS ISO

3874.

Single P-CH G6p06 with Package Sop-8 Power Transistor Electronic Components Mosfet with RoHS ISO Open Details in New Window [Nov 17, 2021]

Product Description 5G Antenna applied discrete semiconductor pb free FET Mosfet G06P06 Part Number G6P06 VDSS -60V ID -4A RDS 80mΩ @ vgs=10V Vth -1.8V Package SOP-8 Ciss 976 pF Crss 30 pF ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Pb Free Hallogan Free RoHS Compliant Dpak Package P-CH 60V Transistor Mosfet G12p06

3875.

Pb Free Hallogan Free RoHS Compliant Dpak Package P-CH 60V Transistor Mosfet G12p06 Open Details in New Window [Jul 22, 2021]

Product Description pb free hallogan free Rohs compliant DPAK package P-ch 60V Transistor Mosfet Part Number G12P06 VDSS -60V ID -12A RDS (typical) 80mΩ @ vgs=10V Vth -1.8V PD 27W Ciss ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Emb12p04h Alternative Part G26p04 Single P CH Mosfet Vdss 40V Tsdson Dfn Package

3876.

Emb12p04h Alternative Part G26p04 Single P CH Mosfet Vdss 40V Tsdson Dfn Package Open Details in New Window [Jul 20, 2021]

Product Description EMB12P04H alternative part G26P04 Single P ch Mosfet vdss 40V TSDSON DFN package Part Number G26p04 VDSS -40V ID -26A RDS(on) 15mΩ @ vgs=4.5V RDS(on) 13mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

EMS Fet Transistor P Channel Mosfet 40V Vdss 15A 50mohm RDS (on) Dpak to-252 G15p04

3877.

EMS Fet Transistor P Channel Mosfet 40V Vdss 15A 50mohm RDS (on) Dpak to-252 G15p04 Open Details in New Window [Jul 19, 2021]

Product Description EMS FET Transistor P channel Mosfet 40V VDSS 15A 50mohm Rds(on) DPAK TO-252 G15P04 Part Number G15p04 VDSS -40V ID -15A RDS(on) 50mΩ @ vgs=4.5V RDS(on) 28mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

SGS RoHS Certified High Current Load Protection 40V P Channel Trench Mosfet to-252

3878.

SGS RoHS Certified High Current Load Protection 40V P Channel Trench Mosfet to-252 Open Details in New Window [Jul 19, 2021]

Product Description SGS Rohs certified high current load protection 40V P CHANNEL TRENCH MOSFET TO-252 Part Number G12p04 VDSS -40V ID -12A RDS(on) 34mΩ @ vgs=4.5V RDS(on) 23mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

LED Dimmer Usage Ao3422 Alternative G03n06 60V 3A Electronic Component Field Effect Transistor ...

3879.

LED Dimmer Usage Ao3422 Alternative G03n06 60V 3A Electronic Component Field Effect Transistor ... Open Details in New Window [Apr 23, 2021]

Product Description Led dimmer usage AO3422 alternative G03N06 60V 3A Electronic Component Field Effect Transistor Mosfet Part Number 03N06 VDSS 60V ID 3A RDS 89mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Field Transistor Type N Mosfet Power 1.7W Current Power 3A Voltage 60V 03n06 Sot-23-3L

3880.

Field Transistor Type N Mosfet Power 1.7W Current Power 3A Voltage 60V 03n06 Sot-23-3L Open Details in New Window [Mar 30, 2021]

Product Description Field Transistor Type N Mosfet Power 1.7W CURRENT POWER 3A VOLTAGE 60V Part number: 03N06 Package: SOT-23-3L Part Number 03N06 VDSS 60V ID 3A RDS 89mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Mosfet Transistor Distribution Power 130W Drain Source Voltage 40V Drain Current 120A G120n04 ...

3881.

Mosfet Transistor Distribution Power 130W Drain Source Voltage 40V Drain Current 120A G120n04 ... Open Details in New Window [Mar 30, 2021]

Product Description MOSFET Transistor Distribution power 130W Drain Source Voltage 40V Drain Current 120A Part Number: G120N04 Package: TO-251/252 Part Number G120N04 VDSS 40V ID 120A RDS 5.6mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Field Effect Mosfet Sot-23-3 60V (D-S) 3A RDS (on) 81momega for Battery Switch

3882.

Field Effect Mosfet Sot-23-3 60V (D-S) 3A RDS (on) 81momega for Battery Switch Open Details in New Window [Mar 19, 2021]

Product Description Field Effect Mosfet SOT-23-3 60V(D-S) 3A RDS(on) 81mOmega for battery switch Part Number 03N06 VDSS 60V ID 3A RDS 81mΩ @ vgs=4.5V Vth 1.35V Package SOT-23 Ciss 247 ...

Company: Wuxi Goford Semiconductor Co., Ltd.

electronic components N-channel MOSFET JMTL3N10A SOT-23

3883.

electronic components N-channel MOSFET JMTL3N10A SOT-23 Open Details in New Window [Jun 30, 2023]

Product Description Features 100V,3A RDS(ON) =180mR (Typ.) @ VGS =10V RDS(ON) =210mR (Typ.) @ VGS =4.5V High Density Cell Design for Ultra Low RDS(ON) Fully Characterized Avalanche Voltage and Current ...

Company: Kunshan Huateng Electronics Co., Ltd.

N-channel Enhancement Mode Power MOSFET JMTL3400A SOT-23

3884.

N-channel Enhancement Mode Power MOSFET JMTL3400A SOT-23 Open Details in New Window [Dec 26, 2022]

Product Description Features 30V,5.8A RDS(ON)< 26m&Omega; @ VGS =10V RDS(ON)< 32m&Omega; @ VGS =4.5V RDS(ON)< 50m&Omega; @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead ...

Company: Kunshan Huateng Electronics Co., Ltd.

N-channel MOSFET JMTL2N7002K SOT-23

3885.

N-channel MOSFET JMTL2N7002K SOT-23 Open Details in New Window [Dec 12, 2022]

Product Description Features VDS=60V, ID=0.3A RDS(ON) <2.8&Omega; @ VGS = 10V RDS(ON) <3.6&Omega; @ VGS = 5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...

Company: Kunshan Huateng Electronics Co., Ltd.