Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Electronic Component

» Jiangsu Product List

Product List

9014s 5inch High Frequency Small Signal Transistor Chip Silicon Wafer

4126.

9014s 5inch High Frequency Small Signal Transistor Chip Silicon Wafer Open Details in New Window [Dec 11, 2020]

Die Size 300μ m×300μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

9014ss 5inch High Frequency Small Signal Transistor Chip Silicon Wafer

4127.

9014ss 5inch High Frequency Small Signal Transistor Chip Silicon Wafer Open Details in New Window [Dec 11, 2020]

Die Size 280μ m×280μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

9014m 5inch High Frequency Small Signal Transistor Chip Silicon Wafer

4128.

9014m 5inch High Frequency Small Signal Transistor Chip Silicon Wafer Open Details in New Window [Dec 11, 2020]

Die Size 330μ m×330μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

8015 5inch High Frequency Small Signal Transistor Chip Silicon Wafer

4129.

8015 5inch High Frequency Small Signal Transistor Chip Silicon Wafer Open Details in New Window [Dec 11, 2020]

Die Size 400μ m×400μ m BVCEO -20V BVCBO -35V BVEBO -6V hFE 100-400 VCE(sat) -0.3V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

9012s 5-Inch High Frequency Small Signal Transistor Chip Silicon Wafer

4130.

9012s 5-Inch High Frequency Small Signal Transistor Chip Silicon Wafer Open Details in New Window [Dec 11, 2020]

Die Size 400μ m×400μ m BVCEO -30V BVCBO -50V BVEBO -8V hFE 85-400 VCE(sat) -0.6V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

Bav99 5-Inch Fast Switching Diode Chips/Silicon Wafer

4131.

Bav99 5-Inch Fast Switching Diode Chips/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.28mm×0.28mm IF 215mA VR 75V VF/VF1 1.25/0.715V IR 1μA CT 3pF trr 4ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

1ss187 5-Inch Fast Switching Diode Chips/Silicon Wafer

4132.

1ss187 5-Inch Fast Switching Diode Chips/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.28mm×0.28mm IF 100mA VR 80V VF/VF1 1/25V IR 1μA CT 3pF trr 4ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

Jtr0125b4 4-Inch Triacs Thyristor Chips/Silicon Wafer

4133.

Jtr0125b4 4-Inch Triacs Thyristor Chips/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.25mm×1.25mm VDRM 600V VRRM 600V IT 1A ITSM 10A IGT(MAX.) 5/5/10/20mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S68p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4134.

S68p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.73mm×1.73mm IF 5A VR 60V IR 50μA VF 0.66V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S68p40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4135.

S68p40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.73mm×1.73mm IF 5A VR 40V IR 50μA VF 0.52V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S66p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4136.

S66p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.67mm×1.67mm IF 5A VR 40V IR 50μA VF 0.54V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S60h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4137.

S60h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.52mm×1.52mm IF 3A VR 100V IR 5μA VF 0.84V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S60p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4138.

S60p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.52mm×1.52mm IF 3A VR 60V IR 50μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S60p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4139.

S60p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.52mm×1.52mm IF 3A VR 40V IR 50μA VF 0.53V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S55h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4140.

S55h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.4mm×1.4mm IF 3A VR 100V IR 5μA VF 0.85V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.