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S55h60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4141.

S55h60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.4mm×1.4mm IF 3A VR 60V IR 2μA VF 0.71V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S55p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4142.

S55p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.4mm×1.4mm IF 3A VR 60V IR 30μA VF 0.63V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S55p40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4143.

S55p40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.4mm×1.4mm IF 3A VR 40V IR 50μA VF 0.52V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S50p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4144.

S50p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.27mm×1.27mm IF 3A VR 60V IR 30μA VF 0.66V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S50p40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4145.

S50p40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.27mm×1.27mm IF 3A VR 40V IR 50μA VF 0.53V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S45p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4146.

S45p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.14mm×1.14mm IF 2A VR 60V IR 2μA VF 0.72V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S45p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4147.

S45p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.14mm×1.14mm IF 2A VR 40V IR 25μA VF 0.53V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S45n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4148.

S45n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.14mm×1.14mm IF 2A VR 20V IR 100μA VF 0.46V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S40p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4149.

S40p40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.016mm×1.016mm IF 2A VR 40V IR 50μA VF 0.54V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S40p60byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4150.

S40p60byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.016mm×1.016mm IF 2A VR 60V IR 25μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S28n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4151.

S28n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.71mm×0.71mm IF 1A VR 20V IR 100μA VF 0.45V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S26n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4152.

S26n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.66mm×0.66mm IF 1A VR 40V IR 100μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S24n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4153.

S24n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.61mm×0.61mm IF 0.75A VR 40V IR 1000μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S28n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

4154.

S28n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.71mm×0.71mm IF 1A VR 60V IR 100μA VF 0.66V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

Jtr0210b4 4-Inch Triacs Thyristor Chips/Silicon Wafer

4155.

Jtr0210b4 4-Inch Triacs Thyristor Chips/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 2.10mm×2.10mm VDRM 600V VRRM 600V IT 4A ITSM 40A IGT(MAX.) 10/10/15/30 mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.