Jiangsu Profile
Product List
22426. High Quality IGBT Power Module Standard Recovery SCR Semiconductor Device Thyristor Module ... 
[Mar 05, 2026]
[Mar 05, 2026] Product Description Unleash the Power: The zhendi MFC100A SCR Thyristor Module boasts extraordinary high-power capabilities with an astonishing current rating soaring up to 800A in on-state (IT (RMS) and IT (AV)). This ...
22427. High Current Capacity 800A IGBT Power Module SCR Thyristor Control Board at an Price [Mar 05, 2026]
[Mar 05, 2026] Product Description Factory Direct Pricing: Being a direct manufacturer, Zhenjiang Zhendi Electric Technology Co., Ltd offers you unparalleled competitive pricing. We eliminate intermediaries to ensure you receive the ...
22428. Surface Mount Single Phase Control Double-Side Cooling SCR Thyristor for High Current Use [Mar 04, 2026]
[Mar 04, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: Experience robust reliability with the KP500a, KP1000a, and KP2500a SCR Thyristor Module. Engineered to withstand a broad temperature range from ...
22429. Reliable Low-Cost SCR Thyristor Triac for Efficient Refrigeration [Apr 15, 2026]
[Apr 15, 2026] .Experience lightning-fast and dependable shipping solutions for our SCR Thyristor Triac Chips, thoughtfully crafted for seamless integration into HVAC systems. Delivering excellence to your doorstep with speed and ...
22430. Zhendi Supplier Double-Side Cooling SCR Thyristor for High Current Use and High Voltage Control [Feb 10, 2026]
[Feb 10, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: Experience unparalleled reliability with the KP500a KP1000a KP2500a SCR Thyristor Module, designed to operate seamlessly across a vast ...
22431. 50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
22432. High-Performance Silicon SCR IGBT Module for Long-Lasting Power [Apr 08, 2026]
[Apr 08, 2026] Introducing the High-Performance Silicon SCR IGBT Module for Long-Lasting Power by Quancheng. This durable thyristor diode module is perfect for reliable electrical applications, especially in HVDC systems. Made in ...
22433. High Performance Thyristor Mtc30-160 SCR Module for Industrial Applications [Dec 02, 2025]
[Dec 02, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
22434. High Quality SCR Thyristor for Power Control Fast Delivery Energy Saving for Phase Control ... [Jan 04, 2026]
[Jan 04, 2026] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
22435. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
22436. 40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
22437. 100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
22438. 50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
22439. 90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
22440. 90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
